Processes for growing carbon nanotubes using disordered carbon target

Abstract

Processes for producing single-wall carbon nanotubes without catalysts are provided. The nanotubes are produced by vaporizing silicon carbide and carbon.

1 . A process comprising:
 a) providing a target comprising silicon carbide and carbon;   b) vaporizing the target in a catalyst-free environment in an inert atmosphere at a pressure from about 10 −3  Torr to 1000 Torr); and   c) forming a product comprising at least one single-wall carbon nanotube.   
     
     
         2 . The process of  claim 1 , wherein the vaporization step is carried out by laser ablation. 
     
     
         3 . The process of  claim 2 , wherein the laser ablation is performed at a temperature from about 100° C. to about 1500° C. 
     
     
         4 . The process of  claim 2 , wherein the laser ablation is performed at a temperature from about 1000° C. to about 1200° C. 
     
     
         5 . The process of  claim 1 , wherein the pressure is about 500 Torr or greater. 
     
     
         6 . The process of  claim 1 , further comprising an annealing step after the formation of the at least one single-wall carbon nanotube. 
     
     
         7 . The process of  claim 1 , wherein the vaporization is carried out in the presence of an inert gas selected from argon, neon, helium, nitrogen and mixtures thereof. 
     
     
         8 . A single-wall carbon nanotube produced by the process of  claim 1 .