Apparatus for and method of continuous hts tape buffer layer deposition using large scale ion beam assisted deposition

Abstract

The present invention is a high-throughput ion beam assisted deposition (IBAD) system and method of utilizing such a system that enables continuous deposition of thin films such as the buffer layers of HTS tapes. The present invention includes a spool-to-spool feed system that translates a metal substrate tape through the IBAD system as the desired buffer layers are deposited atop the translating substrate tape using an e-beam evaporator assisted by an ion beam. The system further includes a control and monitor system to monitor and regulate all necessary system parameters. The present invention facilitates deposition of a high-quality film over a large area of translating substrate.

1 . A process for continuous deposition of a coating of an HTS tape, comprising:
 loading a substrate into a deposition chamber;   translating the substrate through the deposition chamber;   depositing a coating material from a deposition source on the substrate to thereby form the coating while translating the substrate, the coating being a buffer layer over which an HTS layer is formed, the buffer layer having a biaxial texture;   impinging an ion beam from an ion source on the substrate during depositing;   monitoring the biaxial texture of the coating during depositing; and   adjusting the power level of at least one of the ion source and the deposition source during depositing based on the monitoring of biaxial texture.   
   
   
       2 . The process of  claim 1 , wherein the buffer layer has an in-plane texture of not greater than 20 degrees. 
   
   
       3 . The process of  claim 2 , wherein the buffer layer has an in-plane texture of not greater than 15 degrees. 
   
   
       4 . The process of  claim 3 , wherein the buffer layer has an in-plane texture of not greater than 14 degrees. 
   
   
       5 . The process of  claim 1 , wherein the coating material is generated by vaporizing a material source in the deposition chamber, vaporization being carried out by energizing an energy source. 
   
   
       6 . The process of  claim 5 , wherein the energy source is selected from the group consisting of electron beam energy, ion beam energy, and magnetron energy. 
   
   
       7 . The process of  claim 1 , wherein the substrate is translated through the deposition chamber by a reel-to-reel system. 
   
   
       8 . The process of  claim 1 , wherein a substrate block and the substrate are in a heat transfer relationship, the substrate block being maintained at a temperature below 50° C. 
   
   
       9 . The process of  claim 1 , wherein the tape is translated through the deposition chamber at a speed within a range of about 0.4 to 300 meters/hour. 
   
   
       10 . The process of  claim 1 , wherein the coating material is selected from the group consisting of MgO and YSZ. 
   
   
       11 . The process of  claim 1 , wherein the coating material is deposited with the assist of an ion beam. 
   
   
       12 . The process of  claim 1 , wherein the substrate comprises a nickel alloy. 
   
   
       13 . A process for continuous deposition of a coating of an HTS tape, comprising:
 loading a substrate into a deposition chamber;   translating the substrate through the deposition chamber;   depositing a coating material from a deposition source on the substrate to thereby form the coating while translating the substrate, the coating being a buffer layer over which an HTS layer is formed, the buffer layer having a biaxial texture;   impinging an ion beam from an ion source on the substrate during depositing;   monitoring the biaxial texture of the coating, a number of ions from the ion beam impinging on the substrate, and a thickness of the coating during depositing; and   adjusting the power level of at least one of the ion source and the deposition source during depositing based on the monitoring of biaxial texture.