Group iii nitride semiconductor device and light-emitting device using the same

Abstract

A Group III nitride semiconductor device and method for producing the same. The device includes a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate. A first layer which is in contact with the substrate is composed of Al x Ga 1-x N (0≦x≦1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer. The method includes a first step of depositing on a substrate, a layer containing fine Group III metal particles containing silicon; a second step of nitridizing the fine particles in an atmosphere containing a nitrogen source; and a third step of growing a Group III nitride semiconductor single crystal on the thus-nitridized fine particles.

1 . A method for producing a Group III nitride semiconductor device, which method comprises a first step of depositing, on the surface of a substrate, a layer containing fine Group III metal particles containing silicon; a second step of nitridizing the fine particles in an atmosphere containing a nitrogen source; and a third step of growing a Group III nitride semiconductor single crystal on the thus-nitridized fine particles. 
     
     
         2 . A method for producing a Group III nitride semiconductor device according to  claim 1 , which further comprises, between the first and second steps, an annealing step of heating the fine particles in an atmosphere containing hydrogen gas and/or nitrogen gas.