US2010270458A1PendingUtilityA1
Liquid electrical interconnect and devices using same
Est. expiryApr 24, 2029(~2.8 yrs left)· nominal 20-yr term from priority
H05K 3/32H05K 2201/09045H05K 3/4007H10W 90/724H10W 72/07227H10W 72/251H10W 72/241H10W 72/073H10W 72/072H10W 20/20H10W 20/023
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Claims
Abstract
Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.
Claims
exact text as granted — not AI-modified1 . An interconnect for a semiconductor structure, the interconnect comprising:
a first conductive structure; a second conductive structure; and a liquid conductive material in contact with the first and second structure, the liquid conductive material remaining a liquid during manufacture of the semiconductor device.
2 . The interconnect of claim 1 , wherein the liquid conductive material is an epoxy comprising a conductive filler.
3 . The interconnect of claim 2 , wherein the epoxy further comprises an electrolyte.
4 . The interconnect of claim 2 , wherein the epoxy further comprises a thinner.
5 . The interconnect of claim 1 , wherein the liquid conductive material is an electrolyte.
6 . The interconnect of claim 5 , wherein the electrolyte comprises a polymer.
7 . The interconnect of claim 5 , wherein the electrolyte comprises polypropylene glycol and lithium based salts.
8 . The interconnect of claim 5 , wherein the electrolyte comprises polyethylene oxide and salts.
9 . The interconnect of claim 8 , wherein the electrolyte further comprises propylene glycol.
10 . The interconnect of claim 1 , wherein the liquid conductive material has a viscosity of less than about 100,000 cps.
11 . A semiconductor structure comprising:
a first substrate comprising:
at least one opening, and
a first conductive contact within the at least one opening;
a second substrate comprising:
at least one projection,
at least one second conductive contact integrated with the at least one projection;
wherein the at least one opening is in mating physical alignment with the at least one projection; and
a liquid conductive material within the at least one opening, the liquid conductive material remaining a liquid during manufacture of the semiconductor structure and providing an electrical connection between the first conductive contact and the at least one second conductive contact.
12 . The semiconductor component of claim 11 , wherein at least one of the first substrate and second substrate comprise active semiconductor devices.
13 . The semiconductor component of claim 12 , wherein the active semiconductor devices comprise an imager device comprising a pixel array.
14 . The semiconductor component of claim 13 , further comprising a third substrate, the third substrate being at least partially transparent and comprising at least one lens for focusing an image on the pixel array.
15 . The semiconductor component of claim 14 , wherein at least one of the first substrate and second substrate are moveable with respect to the third substrate during operation of the device.
16 . The semiconductor component of claim 11 , wherein the first conductive contact and the at least one second conductive contact form a through interconnect.
17 . The semiconductor component of claim 11 , wherein the at least one projection is a vertical pin.
18 . The semiconductor component of claim 11 , wherein the first substrate and second substrate are part of an electronic device and wherein the first substrate and second substrate are moveable with respect to one another during operation of the device.
19 . The semiconductor component of claim 11 , further comprising a device for moving at least one of the first substrate and second substrate.
20 . The semiconductor component of claim 19 , wherein the device comprises a MEMS device.
21 . A method of forming a semiconductor component, the method comprising:
providing a first substrate, the first substrate comprising: at least one opening, and a first conductive contact within the at least one opening; at least partially filling the at least one opening with a liquid conductive material, the liquid conductive material remaining a liquid during the formation of the semiconductor component; and engaging the first substrate with a second substrate, the second substrate comprising: at least one projection extending into the opening of the first substrate, and, at least one second conductive contact provided on the at least one projection engaging with the liquid conductive material.
22 . The method of claim 21 , further comprising:
aligning the first substrate and second substrate such that the at least one opening is aligned with the at least one projection; and placing the at least one opening is in mating physical engagement with the at least one projection such that the liquid conductive material is in contact with the first conductive contact and the at least one second conductive contact.
23 . The method of claim 21 , further comprising subsequent to the act of placing, moving at least one of the first substrate and second substrate with respect to the other.
24 . The method of claim 23 , wherein the act of moving comprises moving the first substrate away from or toward the second substrate.
25 . The method of claim 23 , wherein the act of moving comprises operating a movement device to move at least one of the first substrate and second substrate with respect to the other.
26 . The method of claim 23 , further comprising providing at least one lens, wherein the first substrate further comprises a pixel array and wherein the act of moving comprises moving the first substrate with respect to the at least one lens.
27 . An imager device comprising:
a semiconductor structure comprising:
a first substrate comprising a pixel array,
a second substrate electrically connected to the first substrate by a liquid conductive material;
at least one lens for focusing an image on the pixel array.
28 . The imager device of claim 27 , wherein the device for moving at least the first substrate is located on one of the first substrate and second substrate.
29 . The imager device of claim 27 , further comprising a third substrate, wherein the at least one lens is located on the third substrate.
30 . The imager device of claim 27 , wherein the first substrate further comprises:
at least one opening, and a first conductive contact within the at least one opening;
31 . The imager device of claim 30 , wherein the non-hardening liquid conductive material is within the at least one opening.
32 . The imager device of claim 31 , wherein the second substrate comprises:
at least one projection extending into the opening of the first substrate, and, at least one second conductive contact provided on the at least one projection and engaging with the non-hardening liquid conductive material.
33 . A method of focusing an image on a pixel array of an imager device, the method comprising:
providing a semiconductor structure comprising:
first substrate comprising a pixel array,
a second substrate electrically connected to the first substrate by a liquid conductive material to allow relative movement between the first substrate and second substrate;
arranging at least one lens to focus an image on the pixel array; and operating a device to move the first substrate relative to the at least one lens.
34 . The method of claim 33 , wherein the moving the at least one first substrate comprises moving the first substrate during operation of the imager device.Cited by (0)
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