Concentric Gate Nanotube Transistor Devices

Abstract

Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate surrounds at least a portion of a nanotube in a pore. A transistor of the invention may be especially suited for power transistor or power amplifier applications.

1 . A structure comprising:
 a porous structure comprising a plurality of pores, wherein each pore comprises a single-walled carbon nanotube, an insulating material, and a conductive material,   the single-walled carbon nanotube being surrounded by the insulating material, which is surrounded by the conductive material;   a first electrode coupled to a first end of at least one of the single-walled carbon nanotubes; and   a second electrode coupled to a second end of the at least one of the single-walled carbon nanotubes.   
     
     
         2 . The structure of  claim 1  wherein each pore forms a transistor device and the conductive material is a gate electrode of the transistor device.