Organic thin film transistor

Abstract

To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more.

1 . A method for producing an organic thin film transistor, the method comprising;
 treating a SiO 2  insulating layer with hexamethyldisilazane,   wherein the organic thin film transistor comprises a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material and a third electrode,   wherein the organic semiconductor material comprises a polymer having a repeating unit expressed by the following general structural formula (I), and the polymer has a weight-average molecular weight (Mw) of 20,000 or more, and   
       
         
           
           
               
               
           
         
         where R 1 , R 2 , and R 4  each independently represents a halogen atom or a group selected from an alkyl group, alkoxy group and alkylthio group all of which may be substituted; R 3  represents a halogen atom or a group selected from an alkyl group, alkoxy group, alkylthio group, and aryl group all of which may be substituted; z represents an integer of 0 to 5; x, y, and w each independently represents an integer of 0 to 4; and when two or more of each of R 1 , R 2 , R 3  and R 4  appear, the R's may be the same or different. 
       
     
     
         2 . The method according to  claim 1 , wherein the third electrode is a gate electrode, and an insulating layer is provided between the gate electrode and the organic semiconductor layer. 
     
     
         3 . The method according to  claim 1 , wherein the organic semiconductor layer has a thickness of from 5 nm to 200 nm. 
     
     
         4 . The method according to  claim 1 , wherein the organic semiconductor layer has a thickness of from 5 nm to 100 nm. 
     
     
         5 . The method according to  claim 1 , wherein the organic semiconductor layer has a thickness of from 5 nm to 30 nm. 
     
     
         6 . The method according to  claim 2 , wherein the insulating layer is formed of an insulating material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, polyimides, polyvinyl alcohols, polyvinyl phenols, polyesters, polyethylene, polyphenylenesulfides, polyparaxylylene, polyacrylonitrile, cyanoethylpullulan, and combinations thereof.