System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices

Abstract

A substrate device is designed by identifying one or more criteria for handling of a transient electrical event on the substrate device. The one or more criteria may be based at least in part on an input provided from a designer. From the one or more criteria, one or more characteristics may be determined for integrating VSD material as a layer within or on at least a portion of the substrate device. The layer of VSD material may be positioned to protect one or more components of the substrate from the transient electrical condition.

1 . A method for optimizing application of voltage switchable dielectric material (VSD) on a substrate device, the method being performed by one or more processors that perform steps comprising:
 identifying one or more criteria for handling a transient electrical event on the substrate device;   identifying one or more optimization criteria for integrating the layer of VSD material onto at least the portion of the substrate; and   optimizing the layer of VSD material based on the one or more optimization criteria.   
     
     
         2 . The method of  claim 1 , further comprising:
 determining, from the one or more criteria, one or more characteristics for integrating VSD material as a layer within or on at least a portion of the substrate device, the layer of VSD material being positioned to protect one or more components of the substrate from the transient electrical event.   
     
     
         3 . The method of  claim 2 , wherein determining the one or more characteristics includes making a determination of the threshold voltage level needed to switch the layer of VSD material into the conductive state. 
     
     
         4 . The method of  claim 3 , wherein making the determination includes determining the threshold voltage level from (i) a characteristic voltage per designated length for that type of VSD material. 
     
     
         5 . The method of  claim 3 , wherein making the determination includes determining the threshold voltage level from a size of a gap separation that is to be bridged during the transient electrical event by the layer of VSD material. 
     
     
         6 . The method of  claim 3 , wherein optimizing the layer of VSD material includes selecting a type of VSD material for use in the layer of VSD material so that the threshold voltage level is less than the tolerable voltage level of the one or more components. 
     
     
         7 . The method of  claim 1 , wherein optimizing the layer of VSD material includes optimizing the layer of VSD material based at least in part on a cost for using each of a plurality of types of VSD material. 
     
     
         8 . The method of  claim 1 , wherein optimizing the layer of VSD material includes optimizing the layer of VSD material based at least in part on a performance of each of a plurality of types of VSD material. 
     
     
         9 . The method of  claim 1 , wherein optimizing the layer of VSD material includes optimizing the layer of VSD material based at least in part on a minimization of the size of a gap separation required by use of each of a plurality of types of VSD material. 
     
     
         10 . The method of  claim 1 , wherein optimizing the layer of VSD material includes optimizing the layer of VSD material based at least in part on at least two of (i) on a cost for using each of a plurality types of VSD material, (ii) on a performance of each of a plurality of types of VSD material, and/or (iii) a minimization of the size of a gap separation required by use of each type of VSD material.