Substrate plasma-processing apparatus

Abstract

A substrate plasma-processing apparatus for plasma-processing a surface of an electrode of an organic light emitting device. The substrate plasma-processing apparatus may adjust the distance between a first electrode and a substrate and adjust the distance between a second electrode and the substrate.

1 . A substrate plasma-processing apparatus for plasma-processing the surface of a display electrode formed on a substrate, the substrate plasma-processing apparatus comprising:
 a chamber having disposed therein the substrate;   a first electrode disposed in the chamber a first distance apart from the bottom surface of the substrate;   a second electrode disposed in the chamber a second distance apart from the top surface of the substrate; and   a distance adjusting unit to selectively adjust the first distance between the first electrode and the substrate or the second distance between the second electrode and the substrate.   
     
     
         2 . The substrate plasma-processing apparatus of  claim 1 , wherein the distance adjusting unit adjusts the first distance between the first electrode and the substrate by raising or lowering the substrate. 
     
     
         3 . The substrate plasma-processing apparatus of  claim 2 , wherein the distance adjusting unit adjusts the second distance between the second electrode and the substrate by raising or lowering the second electrode. 
     
     
         4 . A substrate plasma-processing apparatus for plasma-processing the surface of a display electrode of an organic light emitting device, the substrate plasma-processing apparatus comprising:
 a chamber;   a distance adjusting unit for supporting and moving the substrate in the chamber;   a first electrode disposed a first distance below and apart from the substrate; and   a second electrode facing the first electrode by being disposed above and apart a second distance from the substrate such that the substrate is between the first and second electrodes,   wherein the distance adjusting unit adjusts the first distance between the substrate and the first electrode or the second distance between the substrate and the second electrode.   
     
     
         5 . The substrate plasma-processing apparatus of  claim 4 , wherein the distance adjusting unit comprises:
 a substrate supporting unit supporting the substrate;   a supporting bar coupled with the substrate supporting unit in a direction perpendicular to the substrate; and   an actuator vertically raising or lowering the supporting bar.   
     
     
         6 . The substrate plasma-processing apparatus of  claim 5 , wherein the actuator increases the first distance between the substrate and the first electrode by moving the supporting bar toward the outside of the chamber. 
     
     
         7 . The substrate plasma-processing apparatus of  claim 6 , wherein the actuator decreases the first distance between the substrate and the first electrode by moving the supporting bar toward the inside of the chamber. 
     
     
         8 . The substrate plasma-processing apparatus of  claim 5 , wherein the second electrode is supported by the supporting bar and is disposed above and apart from the substrate. 
     
     
         9 . The substrate plasma-processing apparatus of  claim 8 , wherein the second distance between the substrate and the second electrode is maintained constant while the substrate is raised or lowered. 
     
     
         10 . The substrate plasma-processing apparatus of  claim 8 , wherein the second electrode is slidably fixed to the supporting bar. 
     
     
         11 . The substrate plasma-processing apparatus of  claim 10 , wherein, when the substrate is raised, the first distance between the substrate and the first electrode increases and the second distance between the substrate and the second electrode decreases. 
     
     
         12 . The substrate plasma-processing apparatus of  claim 10 , wherein, when the substrate is lowered, the first distance between the substrate and the first electrode decreases and the second distance between the substrate and the second electrode increases. 
     
     
         13 . The substrate plasma-processing apparatus of  claim 5 , wherein the substrate supporting unit and the supporting bar comprise an insulating material. 
     
     
         14 . The substrate plasma-processing apparatus of  claim 13 , wherein the substrate supporting unit and the supporting bar comprise a ceramic material. 
     
     
         15 . The substrate plasma-processing apparatus of  claim 14 , wherein the ceramic material comprises alumina (Al 2 0 3 ). 
     
     
         16 . The substrate plasma-processing apparatus of  claim 5 , further comprising a first insulating member disposed between the substrate supporting unit and the supporting bar,
 wherein the first insulating member couples the substrate supporting unit and the supporting bar.   
     
     
         17 . The substrate plasma-processing apparatus of  claim 16 , further comprising a first cover unit externally surrounding the first insulating member. 
     
     
         18 . The substrate plasma-processing apparatus of  claim 17 , wherein the first cover unit comprises a ceramic material. 
     
     
         19 . The substrate plasma-processing apparatus of  claim 16 , wherein the first insulating member comprises a polymer. 
     
     
         20 . The substrate plasma-processing apparatus of  claim 16 , wherein the substrate supporting unit and the supporting bar comprise a metal. 
     
     
         21 . The substrate plasma-processing apparatus of  claim 4 , further comprising a second insulating member disposed between the first electrode and the chamber. 
     
     
         22 . The substrate plasma-processing apparatus of  claim 21 , wherein the second insulating member comprises a fluoropolymer. 
     
     
         23 . The substrate plasma-processing apparatus of  claim 4 , wherein the second electrode is grounded. 
     
     
         24 . The substrate plasma-processing apparatus of  claim 4 , wherein refrigerant flows in the second electrode so as to maintain the temperature of the second electrode constant. 
     
     
         25 . The substrate plasma-processing apparatus of  claim 4 , wherein the first electrode comprises:
 at least one pipe for delivering gas from an outside of the chamber; and   at least one shower head for emitting the gas delivered by the at least one pipe to the chamber.   
     
     
         26 . The substrate plasma-processing apparatus of  claim 25 , further comprising at least one flow adjusting valve for adjusting the flow of the gas emitted to the first electrode. 
     
     
         27 . The substrate plasma-processing apparatus of  claim 4 , further comprising an inner chamber disposed in the chamber,
 wherein the first electrode is disposed in the inner chamber.   
     
     
         28 . The substrate plasma-processing apparatus of  claim 27 , further comprising a third insulating member disposed between the inner chamber and the chamber. 
     
     
         29 . The substrate plasma-processing apparatus of  claim 28 , wherein the third insulating member comprises a fluoropolymer. 
     
     
         30 . The substrate plasma-processing apparatus of  claim 28 , further comprising a second cover unit externally surrounding the third insulating member. 
     
     
         31 . The substrate plasma-processing apparatus of  claim 30 , wherein the second cover unit comprises a ceramic material. 
     
     
         32 . A method of plasma-processing a display electrode comprising:
 placing a substrate containing the display electrode in a plasma-processing chamber between first and second electrodes such that the first electrode within the chamber is separated from the substrate by a first distance and the second electrode is separated from the substrate by a second distance; and   adjusting the first and/or second distances; and   performing the plasma processing while the substrate is disposed at the adjusted first and/or second distances apart from the first and second electrodes.