Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Abstract

A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×10 17 atoms/cm 3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The silicon single crystal is irradiated with neutrons so as to dope with phosphorous; an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so the phosphorous concentration in the silicon single crystal is 2.9×10 13 to 2.9×10 15 atoms/cm 3 ; a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so the concentration in the single crystal is 1×10 13 to 1×10 15 atoms/cm 3 corresponding to the segregation coefficient thereof.

1 . A method for manufacturing a silicon single crystal wafer for IGBT obtained by growing a silicon single crystal by the Czochralski method, the method comprising: introducing a hydrogen atom-containing substance into the atmospheric gas in a CZ furnace at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, growing a single crystal having an interstitial oxygen concentration of 8.5×10 17  atoms/cm 3  or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects, and irradiating the pulled silicon single crystal with neutrons so as to dope with phosphorous. 
     
     
         2 . A method for manufacturing a silicon single crystal wafer for IGBT obtained by growing a silicon single crystal by the Czochralski method, the method comprising: adding an n-type dopant to a silicon melt, introducing a hydrogen atom-containing substance into the atmospheric gas in a CZ furnace at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×10 17  atoms/cm 3  or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. 
     
     
         3 . A method for manufacturing a silicon single crystal wafer for IGBT obtained by growing a silicon single crystal by the Czochralski method, the method comprising: adding phosphorous to a silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9×10 13  to 2.9×10 15  atoms/cm 3 , adding a p-type dopant having a segregation coefficient smaller than that of the phosphorous to the silicon melt so that the concentration in the silicon single crystal is 1×10 13  to 1×10 15  atoms/cm 3  corresponding to the segregation coefficient thereof, introducing a hydrogen atom-containing substance into the atmospheric gas in a CZ furnace at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing the single crystal having an interstitial oxygen concentration of 8.5×10 17  atoms/cm 3  or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. 
     
     
         4 . The method for manufacturing a silicon single crystal wafer for IGBT according to any of  claims 1  to  3 , wherein nitrogen is added to the silicon melt so that the nitrogen concentration in the silicon single crystal is 1×10 14  to 5×10 15  atoms/cm 3 .