Integration of vacuum microelectronic device with integrated circuit

Abstract

A device includes an integrated circuit (IC) and at least one ultra-small resonant structure formed on said IC. At least the ultra-small resonant structure portion of the device is vacuum packaged. The ultra-small resonant structure portion of the device may be grounded or connected to a known electrical potential. The ultra-small resonant structure may be electrically connected to the underlying IC, or not.

1 . A method making a device comprising:
 obtaining an integrated circuit (IC);   forming an ultra-small resonant structure on an external surface of the IC, wherein said ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR); and   vacuum packaging at least said ultra-small resonant structure.   
     
     
         2 . A method as in  claim 1  further comprising:
 electrically grounding said ultra-small resonant structure.   
     
     
         3 . A method as in  claim 1  further comprising:
 electrically connecting said ultra-small resonant structure to a known electrical potential.   
     
     
         4 . A method as in  claim 2  further comprising:
 forming a region on said IC;   grounding said region; and   electrically connecting said ultra-small resonant structure to said region.   
     
     
         5 . A method as in  claim 3  further comprising:
 forming a region on said IC;   electrically connecting said region to a known electrical potential; and   electrically connecting said ultra-small resonant structure to said region.   
     
     
         6 . A method as in  claim 2  wherein said ultra-small resonant structure is electrically grounded by electrically connecting said ultra-small resonant structure to a connection pin of said IC. 
     
     
         7 . A method as in  claim 3  wherein said ultra-small resonant structure is electrically connected to a connection pin of said IC to provide the known electrical potential. 
     
     
         8 . A method as in  claim 4  wherein said region is grounded by being electrically connected to a connection pin of said IC. 
     
     
         9 . A method as in  claim 5  wherein said region is set to said known electrical potential by being electrically connected to a connection pin of said IC. 
     
     
         10 . A method as in  claim 1  wherein said step of vacuum packaging comprises:
 hermetically sealing at least said ultra-small resonant structure.   
     
     
         11 - 12 . (canceled) 
     
     
         13 . A method as in any one of  claims 1 - 10  wherein said ultra-small resonant structure detects the EMR by altering a detectable characteristic of a beam of charged particles emitted by a source of charged particles. 
     
     
         14 . A method as in  claim 13  wherein said source of charged particles is selected from the group comprising:
 an ion gun, a thermionic filament, tungsten filament, a cathode, a vacuum triode, a field emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.   
     
     
         15 . A method as in  claim 13  wherein the charged particles are selected from the group comprising: positive ions, negative ions, electrons, and protons. 
     
     
         16 . A method as in  claim 1  wherein the ultra-small resonant structure is constructed and adapted to detect at least one of visible light, infrared light, and ultraviolet light. 
     
     
         17 . A method as in  claim 1  further comprising:
 electrically connecting said ultra-small resonant structure to said IC.   
     
     
         18 . A method of making a device comprising:
 forming at least one ultra-small resonant structure on an external surface of an integrated circuit (IC), wherein said ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR); and   vacuum packaging at least said at least one ultra-small resonant structure.   
     
     
         19 . A device comprising:
 an integrated circuit (IC); and   at least one ultra-small resonant structure formed on an external surface of said IC), wherein said ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR).   
     
     
         20 . A device as in  claim 19  wherein said at least one ultra-small resonant structure is vacuum packaged. 
     
     
         21 . A device as in  claim 19  wherein said at least one ultra-small resonant structure is electrically grounded. 
     
     
         22 . A device as in  claim 19  wherein said at least on ultra-small resonant structure is electrically connected to a known electrical potential. 
     
     
         23 . A device as in  claim 19  further comprising:
 at least one electrically grounded region formed on said IC, wherein said at least one ultra-small resonant structure is electrically grounded by being connected to said least one region.   
     
     
         24 . A device as in  claim 19  further comprising:
 at least one region formed on said IC, said at least one region being electrically connected to a known electrical potential, wherein said at least one ultra-small resonant structure is electrically connected to said least one region.   
     
     
         25 . A device as in  claim 19  wherein at least one of said at least one ultra-small resonant structure is electrically connected to said IC. 
     
     
         26 - 31 . (canceled) 
     
     
         32 . A device as in  claim 19  wherein said ultra-small resonant structure detects the EMR by altering a detectable characteristic of a beam of charged particles emitted by a source of the charged particles. 
     
     
         33 . A device as in  claim 32  wherein said source of charged particles is selected from the group comprising:
 an ion gun, a tungsten filament, a cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, and an ion-impact ionizer.   
     
     
         34 . A device as in  claim 32  wherein the charged particles are selected from the group comprising: positive ions, negative ions, electrons, and protons. 
     
     
         35 . A method of making a circuit comprising:
 obtaining an integrated circuit (IC);   forming at least one ultra-small resonant structure, wherein said at least one ultra-small resonant structure is electrically connected to said IC and is constructed and adapted to detect electromagnetic radiation (EMR); and   vacuum packaging said circuit.   
     
     
         36 . A method as in  claim 35  further comprising:
 forming a first dielectric layer on a surface of said IC;   forming an interconnect layer on said first dielectric layer; and   forming a second dielectric layer on said interconnect layer, wherein said at least one ultra-small resonant structure is formed on said second dielectric layer.   
     
     
         37 . A method as in  claim 35  wherein said at least one ultra-small resonant structure is formed on a surface of said IC. 
     
     
         38 . A method as in  claim 35  further comprising:
 forming a first dielectric layer on a surface of said IC;   forming an interconnect layer on said first dielectric layer; wherein said at least one ultra-small resonant structure is formed on said interconnect layer.   
     
     
         39 . A method as in  claim 36  further comprising:
 forming at least one contact via in said second dielectric layer to allow electrical connection of an ultra-small resonant structure on said substrate to said interconnect layer, and   forming a second contact via in said first dielectric layer to allow electrical connection of said IC to said interconnect layer,   wherein said at least one ultra-small resonant structure is electrically connected to said IC via said first contact via, said interconnect layer and said second contact via.   
     
     
         40 - 41 . (canceled) 
     
     
         42 . A method as in any one of  claims 35 - 37  wherein said ultra-small resonant structure detects the EMR by altering a detectable characteristic of a beam of charged particles emitted by a source of charged particles. 
     
     
         43 . A method as in  claim 42  wherein said source of charged particles is selected from the group comprising:
 an ion gun, a tungsten filament, a cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, and an ion-impact ionizer.   
     
     
         44 . A method as in  claim 42  wherein the charged particles are selected from the group comprising: positive ions, negative ions, electrons, and protons. 
     
     
         45 . A method as in any one of  claims 35 - 37  wherein the at least on ultra-small resonant structure is constructed and adapted to detect at least one of visible light, infrared light, and ultraviolet light. 
     
     
         46 . (canceled) 
     
     
         47 . A method as in  claim 36  wherein said first dielectric layer comprises SiO 2 . 
     
     
         48 . A method as in  claim 36  wherein said second dielectric layer comprises SiO 2 . 
     
     
         49 . A method as in  claim 36  wherein said interconnect layer comprises a metal selected from the group comprising: gold (Au), copper (Cu), aluminum (Al) and tungsten (W). 
     
     
         50 . A circuit comprising:
 an integrated circuit (IC); and   at least one ultra-small resonant structure electrically connected to said IC, wherein said at least one ultra-small resonant structure is constructed and adapted to detect electromagnetic radiation (EMR) by altering a measurable characteristic of a beam of charged particles and wherein said IC and said at least one ultra-small resonant structure are vacuum packaged.   
     
     
         51 . (canceled) 
     
     
         52 . A circuit as in  claim 50  wherein said at least one ultra-small resonant structure is formed on a surface of said IC. 
     
     
         53 . A circuit as in  claim 50  further comprising:
 a first dielectric layer formed on a surface of said IC;   an interconnect layer on said first dielectric layer; and   a second dielectric layer on said interconnect layer, wherein said at least one ultra-small resonant structure is formed on said second dielectric layer.   
     
     
         54 . A circuit as in  claim 50  further comprising:
 a first dielectric layer on a surface of said IC;   an interconnect layer on said first dielectric layer; wherein said at least one ultra-small resonant structure is formed on said interconnect layer.