US2010301217A1PendingUtilityA1

MINIATURE PHASE-CORRECTED ANTENNAS FOR HIGH RESOLUTION FOCAL PLANE THz IMAGING ARRAYS

54
Assignee: UNIV OHIO STATEPriority: May 28, 2009Filed: May 28, 2010Published: Dec 2, 2010
Est. expiryMay 28, 2029(~2.9 yrs left)· nominal 20-yr term from priority
H10F 39/806H10F 39/8023G01J 1/4228H01Q 19/062H01Q 3/40H01Q 25/007G01J 5/0837
54
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

An array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer have a monolithically integrated antenna bonded to each backward diode. The Antimonide-based tunnel barrier may be doped with, for example, a non-uniform delta doping profile. An imaging/detection device includes a 2D focal plane array of an array of backward diodes, wherein each backward diode is monolithically bonded to an antenna, which array is located at the back of an extended hemispherical lens, and wherein certain of the arrays are tilted for correcting optics aberrations. The antennas may be a bow-tie antenna, a planar log-periodic antenna, a double-slot with microstrip feed antenna, a spiral antenna, a helical antenna, a ring antenna, a dielectric rod antenna, or a double slot antenna with co-planar waveguide feed antenna.

Claims

exact text as granted — not AI-modified
1 . An array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer having a monolithically integrated antenna bonded to each said backward diode. 
     
     
         2 . The array of backward diodes of  claim 1 , wherein said antennas are one or more of broadband or single band. 
     
     
         3 . The array of backward diodes of  claim 1 , wherein a plurality of smaller arrays is cut out therefrom. 
     
     
         4 . The array of backward diodes of  claim 1 , wherein the Antimonide-based tunnel barrier is doped. 
     
     
         5 . The array of backward diodes of  claim 1 , wherein the non-uniform doping profile further comprises a delta doping profile. 
     
     
         6 . The array of backward diodes of  claim 1 , wherein said antennas are one or more of a bow-tie antenna configuration, a planar log-periodic antenna configuration, a double-slot with microstrip feed antenna configuration, a spiral antenna configuration, a helical antenna configuration, a ring antenna configuration, a dielectric rod antenna configuration, or a double slot antenna with co-planar waveguide feed antenna configuration. 
     
     
         7 . The array of backward diodes of  claim 6 , wherein said antennas comprise said double-slot with microstrip feed antenna configuration. 
     
     
         8 . An imaging/detection device comprising:
 a 2D focal plane array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer having monolithically integrated antenna bonded to each said backward diode, which array is located at the back of an extended hemispherical lens.   
     
     
         9 . The imaging/detection device of  claim 8 , wherein certain of said arrays are tilted for correcting optics aberrations. 
     
     
         10 . The array of backward diodes of  claim 8 , wherein said antennas are one or more of broadband or single band. 
     
     
         11 . The array of backward diodes of  claim 8 , wherein the Antimonide-based tunnel barrier is doped. 
     
     
         12 . The array of backward diodes of  claim 8 , wherein the non-uniform doping profile further comprises a delta doping profile. 
     
     
         13 . The array of backward diodes of  claim 8 , wherein said antennas are one or more of a bow-tie antenna configuration, a planar log-periodic antenna configuration, a double-slot with microstrip feed antenna configuration, a spiral antenna configuration, a helical antenna configuration, a ring antenna configuration, a dielectric rod antenna configuration, or a double slot antenna with co-planar waveguide feed antenna configuration. 
     
     
         14 . The array of backward diodes of  claim 13 , wherein said antennas comprise said double-slot with microstrip feed antenna configuration. 
     
     
         15 . An imaging/detection device comprising:
 a 2D focal plane array of an array of backward diodes, wherein each backward diode is monolithically bonded to an antenna, which array is located at the back of an extended hemispherical lens, and wherein certain of said arrays are tilted for correcting optics aberrations.   
     
     
         16 . The array of backward diodes of  claim 15 , wherein said antennas are one or more of broadband or single band. 
     
     
         17 . The array of backward diodes of  claim 15 , wherein the Antimonide-based tunnel barrier is doped. 
     
     
         18 . The array of backward diodes of  claim 15 , wherein the non-uniform doping profile further comprises a delta doping profile. 
     
     
         19 . The array of backward diodes of  claim 15 , wherein said antennas are one or more of a bow-tie antenna configuration, a planar log-periodic antenna configuration, a double-slot with microstrip feed antenna configuration, a spiral antenna configuration, a helical antenna configuration, a ring antenna configuration, a dielectric rod antenna configuration, or a double slot antenna with co-planar waveguide feed antenna configuration. 
     
     
         20 . The array of backward diodes of  claim 19 , wherein said antennas comprise said double-slot with microstrip feed antenna configuration.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.