Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition

Abstract

A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.

1 . A slurry composition for a chemical mechanical polishing process, the slurry composition comprising:
 about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive;   about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a triblock copolymer chemical structure including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block; and   a remainder of water.   
     
     
         2 . The slurry composition of  claim 1 , wherein the triblock copolymer chemical structure is represented by Formula (1), 
       
         
           
           
               
               
           
         
       
       wherein x, y and z independently represent integers in a range of 10 to 1,000. 
     
     
         3 . The slurry composition of  claim 1 , wherein the first polyethylene oxide block and the second polyethylene oxide block have a hydrophilic-lipophilic balance (HLB) value in a range of about 10 to about 15, and
 the polypropylene oxide block has an HLB value in a range of about 28 to about 32.   
     
     
         4 . The slurry composition of  claim 1 , wherein the slurry composition includes about 0.1 percent by weight to about 3.5 percent by weight of the ceria abrasive, and
 about 0.005 percent by weight to about 0.055 percent by weight of the nonionic surfactant.   
     
     
         5 . The slurry composition of  claim 1 , wherein the ceria abrasive has an average particle size in a range of about 50 nm to about 400 nm. 
     
     
         6 . The slurry composition of  claim 5 , wherein the ceria abrasive has an average particle size in a range of about 120 nm to about 160 nm. 
     
     
         7 . The slurry composition of  claim 1 , wherein the slurry composition has a pH value in a range of about 7 to about 12. 
     
     
         8 . The slurry composition of  claim 1 , further comprising a dispersing agent dispersing the ceria abrasive. 
     
     
         9 . The slurry composition of  claim 8 , wherein the dispersing agent is about 0.5 percent by weight to about 3.5 percent by weight of the slurry composition.