Metal barrier-doped metal contact layer

Abstract

A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

1 . A photovoltaic device, comprising:
 an intrinsic metal layer adjacent to a semiconductor absorber layer; and   a doped metal contact layer adjacent to the intrinsic metal layer, the doped metal contact layer comprising a metal base material and a dopant.   
     
     
         2 . The photovoltaic device of  claim 1 , wherein the intrinsic metal layer is selected from the group consisting of molybdenum, aluminum, chromium, iron, nickel, titanium, vanadium, manganese, cobalt, zinc, ruthenium, tungsten, silver, gold, and platinum. 
     
     
         3 . The photovoltaic device of  claim 1 , wherein the intrinsic metal layer comprises a nitride. 
     
     
         4 . The photovoltaic device of  claim 1 , wherein the intrinsic metal layer comprises a molybdenum nitride. 
     
     
         5 . The photovoltaic device of  claim 1 , wherein the metal base material is selected from the group consisting of molybdenum, aluminum, chromium, iron, nickel, titanium, vanadium, manganese, cobalt, zinc, ruthenium, tungsten, silver, gold, and platinum. 
     
     
         6 . The photovoltaic device of  claim 1 , wherein the dopant is selected from the group consisting of copper, antimony, potassium, sodium, cesium, silver, gold, phosphorous, arsenic, and bismuth. 
     
     
         7 . The photovoltaic device of  claim 1 , wherein the doped metal contact layer comprises a copper concentration of about 0.1% to about 10%. 
     
     
         8 . The photovoltaic device of  claim 1 , further comprising a semiconductor window layer, wherein the semiconductor absorber layer is positioned adjacent to the semiconductor window layer, the semiconductor window layer and the semiconductor absorber layer are at least a part of a semiconductor bi-layer, and the semiconductor window layer comprises a cadmium sulfide layer. 
     
     
         9 . A method for manufacturing a photovoltaic device, the method comprising:
 depositing an intrinsic metal layer on a semiconductor absorber layer; and   depositing a doped metal contact layer on the intrinsic metal layer, the doped metal contact layer comprising a metal base material and a dopant.   
     
     
         10 . The method of  claim 9 , wherein depositing an intrinsic metal layer comprises sputtering a molybdenum nitride. 
     
     
         11 . The method of  claim 9 , wherein depositing an intrinsic metal layer comprises depositing one selected from the group consisting of a molybdenum, aluminum, chromium, iron, nickel, titanium, vanadium, manganese, cobalt, zinc, ruthenium, tungsten, silver, gold, and platinum. 
     
     
         12 . The method of  claim 9 , further comprising doping a metal base material to form a doped metal contact layer. 
     
     
         13 . The method of  claim 9 , further comprising:
 doping a metal base material with a dopant, wherein the metal base material is selected from the group consisting of molybdenum, aluminum, chromium, iron, nickel, titanium, vanadium, manganese, cobalt, zinc, ruthenium, tungsten, silver, gold, and platinum, and   wherein the dopant is selected from the group consisting of copper, antimony, potassium, sodium, cesium, silver, gold, phosphorous, arsenic, and bismuth.   
     
     
         14 . The method of  claim 9 , further comprising doping a metal base material with about 0.1% to about 10% copper. 
     
     
         15 . The method of  claim 9 , wherein depositing a doped metal contact layer comprises sputtering a copper-doped molybdenum. 
     
     
         16 . The method of  claim 9 , wherein depositing a doped metal contact layer comprises sputtering a metal base material that comprises the same metal as the intrinsic metal layer. 
     
     
         17 . A photovoltaic module comprising:
 a plurality of photovoltaic cells adjacent to a substrate; and   a back cover adjacent to the plurality of photovoltaic cells, the plurality of photovoltaic cells comprising:
 an intrinsic metal layer adjacent to a semiconductor absorber layer; and 
 a doped metal contact layer adjacent to the intrinsic metal layer, the doped metal contact layer comprising a metal base material and a dopant. 
   
     
     
         18 . The photovoltaic module of  claim 17 , further comprising:
 a first strip of tape having a length distributed along a contact region of each photovoltaic cell, the first strip of tape comprising a front surface and a back surface, each surface containing an adhesive;   a first lead foil distributed along the length of the first strip of tape;   a second strip of tape, having a length shorter than that of the first strip of tape, distributed along the length and between the ends of the first strip of tape, wherein the second strip of tape comprises a front and back surface, each containing an adhesive;   a second lead foil, having a length shorter than that of the second strip of tape, distributed along the length of the second strip of tape; and   a plurality of parallel bus bars, positioned adjacent and perpendicular to the first and second strips of tape, wherein each one of the plurality of parallel bus bars contacts one of the first or second lead foils.   
     
     
         19 . The photovoltaic module of  claim 18 , further comprising first and second submodules, wherein the first submodule comprises two or more cells of the plurality of photovoltaic cells connected in series, and the second submodule comprises another two or more cells of the plurality of photovoltaic cells connected in series, wherein the first and second submodules are connected in parallel through a shared cell. 
     
     
         20 . A method for generating electricity, the method comprising:
 illuminating a photovoltaic cell with a beam of light to generate a photocurrent; and   collecting the generated photocurrent, wherein the photovoltaic cell comprises:
 an intrinsic metal layer adjacent to a semiconductor absorber layer; and 
 a doped metal contact layer adjacent to the intrinsic metal layer, the doped metal contact layer comprising a metal base material and a dopant.