Semiconductor device and method of fabricating the same

Abstract

A method of forming a semiconductor device includes forming a first chip region, a second chip region, and a scribe lane region between the first and second chip regions in a wafer, the wafer having a first surface and a second surface facing the first surface, and forming a penetrating extension hole and a scribe connector in the scribe lane region, the penetrating extension hole penetrating the wafer from the first surface to the second surface and extending along the scribe lane region, wherein the scribe connector connects the first and second chip regions spaced apart from each other by the penetrating extension hole.

1 . A semiconductor device, comprising:
 an active surface on which an integrated circuit is disposed and an inactive surface opposite to the active surface;   a plurality of lateral surfaces connecting edges of the active surface and the inactive surface; and   a protrusion extending from at least one lateral surface of the plurality of lateral surfaces.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the protrusion has a thickness smaller than a distance between the active surface and the inactive surface.