Process for Preventing Development Defect and Composition for Use in the Same

Abstract

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C 1 to C 4 alkanolamine salt of C 4 to C 15 perfluoroalkylcarboxylic acid, C 4 to C 10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

1 . A composition for preventing development-defects which contains a surfactant and is used for the process of forming a resist pattern that increases the amount of reduction in thickness of a chemically amplified photoresist coating after development by 100 Å to 600 Å in comparison with the case of not applying the composition for preventing development-defects, comprising: a step of forming a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more by application; a step of applying a composition for preventing development-defects containing a surfactant on the chemically amplified photoresist coating; a step of baking after at least either the step of forming the chemically amplified photoresist coating by application or the step of applying the composition for preventing development-defects; a step of selectively exposing the chemically amplified photoresist coating; a step of post-exposure baking the chemically amplified photoresist coating; and a step of developing the chemically amplified photoresist coating,
 wherein said surfactant is at least one member selected from the group consisting of (1) an ammonium salt, a tetraalkylammonium salt or a C 1  to C 4  alkanolamine salt of C 4  to C 15  perfluoroalkylcarboxylic acid, (2) an ammonium salt, a tetraalkylammonium salt or a C 1  to C 4  alkanolamine salt of C 4  to C 10  perfluoroalkylsulfonic acid, (3) a quaternary ammonium salt of perfluoroadipic acid, and (4) a fluorinated alkyl quaternary ammonium salt of inorganic acid which is at least one member selected from the group consisting of sulfric acid, hydrochrolic acid, nitric acid and hydroiodic acid, at the same time said surfactant being one that is formed at the equivalent ratio of acid to base of 1:1-1:3.