Copper alloy material for electric/electronic component and method for manufacturing the same

Abstract

An copper alloy material for electric/electronic components containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities, characterized in that its grain size is 3 to 35 μm and size of precipitate containing the both of Co and Si is 5 to 50 nm, electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.

1 . An copper alloy material for electric/electronic components containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities,
 characterized in that its grain size is 3 to 35 μm and size of precipitate containing the both of Co and Si is 5 to 50 nm.   
     
     
         2 . The copper alloy material for electric/electronic components as described in  claim 1 , characterized in that the alloy material further contains 0.01 to 0.5 mass % of one or two or more types selected from a group of Fe, Ni, Cr and P. 
     
     
         3 . The copper alloy material for electric/electronic components as described in  claim 1 , characterized in that the alloy material further contains 0.01 to 0.5 mass % of one or two or more types selected from a group of Sn, Zn, Mg and Mn. 
     
     
         4 . The copper alloy material for electric/electronic components as described in  claim 2 , characterized in that the alloy material further contains 0.01 to 0.5 mass % of one or two or more types selected from a group of Sn, Zn, Mg and Mn. 
     
     
         5 . The copper alloy material for electric/electronic components as described in  claim 1 ,
 characterized in that electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.   
     
     
         6 . A method for producing an copper alloy material for electric/electronic components to obtain a copper alloy material whose grain size is 3 to 35 μm and whose size of precipitate containing the both of Co and Si is 5 to 50 nm, characterized in that the method comprises:
 a step-A of carrying out a solution recrystallizing heat treatment of a copper alloy containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities in temperature not less than 700° C. and less than 950° C.; and 
 a step-B of carrying out a cooling process, after the previous step-A, with an average cooling speed of 50° C./sec or more from the temperature during the solution recrystallizing heat treatment to 300° C. 
 
     
     
         7 . The copper alloy material for electric/electronic components as described in  claim 2 ,
 characterized in that electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.   
     
     
         8 . The copper alloy material for electric/electronic components as described in  claim 3 ,
 characterized in that electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.   
     
     
         9 . The copper alloy material for electric/electronic components as described in  claim 4 ,
 characterized in that electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.