US2010328975A1PendingUtilityA1
Power converter
Est. expiryMar 11, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10W 90/753H02M 7/003H02M 7/48H02M 1/348
42
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Claims
Abstract
In a power converter for converting AC power supplied from an AC power source or DC power supplied from a DC power source to DC power or AC power having predetermined voltage and frequency including at least one switching device ( 130 ) configured to be operable at high temperature, at least one snubber circuit ( 300 ) configured to be operable at high temperature and having a capacitor ( 301 ) configured to be operable at high temperature is provided.
Claims
exact text as granted — not AI-modified1 . A power converter for converting AC power supplied from an AC power source or DC power supplied from a DC power source to DC power or AC power having predetermined voltage and frequency, the power converter comprising:
at least one switching device ( 130 ) configured to be operable at high temperature; and at least one snubber circuit ( 300 ) configured to be operable at high temperature and having a capacitor ( 301 ) configured to be operable at high temperature.
2 . The power converter of claim 1 , wherein
an operating temperature of the at least one switching device ( 130 ) is 150° C. or more.
3 . The power converter of claim 1 , wherein
the at least one switching device ( 130 ) is a semiconductor device using wide band gap semiconductor as a primary material.
4 . The power converter of claim 1 , wherein
an allowable temperature of the at least one snubber circuit ( 300 ) is 150° C. or more.
5 . The power converter of claim 4 , wherein
the capacitor ( 301 ) of the at least one snubber circuit ( 300 ) is a ceramic capacitor.
6 . The power converter of claim 4 , wherein
the capacitor ( 301 ) of the at least one snubber circuit ( 300 ) is a film capacitor using a high heat resistance material as a dielectric material.
7 . The power converter of claim 1 , wherein
the at least one snubber circuit ( 300 ) includes a diode using wide band gap semiconductor as a primary material.
8 . The power converter of claim 3 , wherein
the wide band gap semiconductor is one of silicon carbide, gallium nitride and to diamond.
9 . The power converter of claim 1 , wherein
multiple ones of the at least one switching device ( 130 ) are connected in series to serve as a series circuit ( 170 ), multiple ones of the series circuit ( 170 ) are arranged in parallel, and multiple ones of the at least one snubber circuit ( 300 ) are arranged so that each of the snubber circuits ( 300 ) corresponds to an associated one of the series circuits ( 170 ).
10 . The power converter of claim 1 , wherein
the at least one snubber circuit ( 300 ) is arranged so that each of the at least one snubber circuit ( 300 ) corresponds to an associated one of the at least one switching device ( 130 ).
11 . The power converter of claim 1 , wherein
the at least one switching device ( 130 ) and the at least one snubber circuit ( 300 ) are arranged in the same package.
12 . The power converter of claim 1 , wherein
the at least one switching device ( 130 ) and the at least one snubber circuit ( 300 ) are arranged on the same substrate.
13 . The power converter of claim 11 , wherein
the at least one switching device ( 130 ) is directly connected to terminals of the at least one snubber circuit ( 300 ).
14 . The power converter of claim 11 , wherein
each of all of terminals of the at least one snubber circuit ( 300 ) electrically coupled to the at least one switching device ( 130 ) is directly connected to the at least one switching device ( 130 ), an interconnect member directly connected to the at least one switching device ( 130 ), or an interconnect member directly connected to the at least one switching device ( 130 ) via a heat spreader ( 510 ).
15 . The power converter of claim 1 , wherein
the power converter drives a drive motor ( 40 ) provided in a compressor ( 20 ) including a compression mechanism ( 50 ) for compressing a refrigerant, the drive motor ( 40 ) for driving the compression mechanism ( 50 ), and a casing ( 30 ) in which the compression mechanism ( 50 ) and the drive motor ( 40 ) are provided and which is filled with the refrigerant.
16 . The power converter of claim 15 , wherein
the compression mechanism ( 50 ) is configured to discharge a high-pressure refrigerant into the casing ( 30 ), and a discharge pipe ( 35 ) for causing the high-pressure refrigerant in the casing ( 30 ) to flow to the outside of the casing ( 30 ) is connected to the casing ( 30 ).
17 . The power converter of claim 15 , wherein
the at least one snubber circuit ( 300 ) and the at least one switching device ( 130 ) are arranged in the casing ( 30 ).
18 . The power converter of claim 15 , wherein
the drive motor ( 40 ) includes a stator core portion ( 42 a ) fixed to an inner wall of the casing ( 30 ) and insulating portions ( 42 c ) formed on end surfaces of the stator core portion ( 42 a ) in a direction along a shaft, and the at least one switching device ( 130 ) and the at least one snubber circuit ( 300 ) are supported by the insulating portions ( 42 c ).
19 . The power converter of claim 15 , wherein
the at least one switching device ( 130 ) and the at least one snubber circuit ( 300 ) are arranged between the compression mechanism ( 50 ) and the discharge pipe ( 35 ).
20 . The power converter of claim 15 , wherein
the compressor ( 20 ) is connected to a heat pump circuit including a refrigerant circuit ( 10 ) for performing refrigeration cycle by a refrigerant circulating.
21 . A power converter for converting AC power supplied from an AC power source or DC power supplied from a DC power source to DC power or AC power having predetermined voltage and frequency, the power converter comprising:
at least one switching device ( 130 ); and at least one snubber circuit ( 300 ) including a capacitor ( 301 ); wherein each of all of terminals of the at least one snubber circuit ( 300 ) electrically coupled to the at least one switching device ( 130 ) is directly connected to the at least one switching device ( 130 ), an interconnect member directly connected to the at least one switching device ( 130 ), or an interconnect member directly connected to the at least one switching device ( 130 ) via a heat spreader ( 510 ).
22 . The power converter of claim 7 , wherein
the wide band gap semiconductor is one of silicon carbide, gallium nitride and diamond.
23 . The power converter of claim 12 , wherein
the at least one switching device ( 130 ) is directly connected to terminals of the at least one snubber circuit ( 300 ).
24 . The power converter of claim 13 ,
each of all of the terminals of the at least one snubber circuit ( 300 ) electrically coupled to the at least one switching device ( 130 ) is directly connected to the at least one switching device ( 130 ), an interconnect member directly connected to the at least one switching device ( 130 ), or an interconnect member directly connected to the at least one switching device ( 130 ) via a heat spreader ( 510 ).Cited by (0)
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