US2011001221A1PendingUtilityA1
Dielectric layer
Est. expiryJan 20, 2026(expired)· nominal 20-yr term from priority
H10P 14/69393H10P 14/6342H10D 64/01332H10D 64/691C23C 24/08H10K 10/478
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Claims
Abstract
A dielectric layer is provided. The dielectric layer includes a photo-sensitive polymer or a non-photo-sensitive polymer and an amorphous metal oxide disposed in the photo-sensitive polymer or a non-photo-sensitive polymer.
Claims
exact text as granted — not AI-modified1 . A dielectric layer, comprising:
a photo-sensitive polymer or a non-photo-sensitive polymer; and an amorphous metal oxide, disposed in the photo-sensitive polymer or a non-photo-sensitive polymer.
2 . The dielectric layer of claim 1 , wherein the amorphous metal oxide comprises metal oxide, and the metal of the metal oxide includes Al, Ti, Zr, Ta, Si, Ba, Ge or Hf.
3 . The dielectric layer of claim 1 , wherein the photo-sensitive polymer or the non-photo-sensitive polymer comprising polyimide, polyamide, polyvinylalcohol, polyvinylphenol, polyacrylate, epoxy, polyurethane, fluoropolymer, polysiloxane, polyester, polyacrylonitrile, polystyrene, or polyethylene.
4 . The dielectric layer of claim 1 , wherein a dielectric constant of the dielectric layer is about 5.7.
5 . The dielectric layer of claim 1 , wherein a dielectric constant of the dielectric layer is about 6.7.
6 . The dielectric layer of claim 1 , wherein the dielectric layer is a gate dielectric layer of a transistor.
7 . The dielectric layer of claim 6 , wherein a mobility μ and an on/off ratio of the transistor are 0.047 cm 2 /Vs and 10 4 -10 5 respectively.
8 . The dielectric layer of claim 6 , wherein a mobility μ and an on/off ratio of the transistor are 0.059 cm 2 /Vs and 10 4 respectively.
9 . The dielectric layer of claim 6 , wherein the transistor is a field effect transistor.
10 . The dielectric layer of claim 6 , wherein the transistor is a thin film transistor.
11 . The dielectric layer of claim 1 , wherein the dielectric layer is a dielectric layer of a capacitor.
12 . The dielectric layer of claim 1 , wherein the dielectric layer is applied in high frequency devices.Cited by (0)
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