US2011001221A1PendingUtilityA1

Dielectric layer

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Assignee: IND TECH RES INSTPriority: Jan 20, 2006Filed: Sep 16, 2010Published: Jan 6, 2011
Est. expiryJan 20, 2026(expired)· nominal 20-yr term from priority
H10P 14/69393H10P 14/6342H10D 64/01332H10D 64/691C23C 24/08H10K 10/478
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Claims

Abstract

A dielectric layer is provided. The dielectric layer includes a photo-sensitive polymer or a non-photo-sensitive polymer and an amorphous metal oxide disposed in the photo-sensitive polymer or a non-photo-sensitive polymer.

Claims

exact text as granted — not AI-modified
1 . A dielectric layer, comprising:
 a photo-sensitive polymer or a non-photo-sensitive polymer; and   an amorphous metal oxide, disposed in the photo-sensitive polymer or a non-photo-sensitive polymer.   
     
     
         2 . The dielectric layer of  claim 1 , wherein the amorphous metal oxide comprises metal oxide, and the metal of the metal oxide includes Al, Ti, Zr, Ta, Si, Ba, Ge or Hf. 
     
     
         3 . The dielectric layer of  claim 1 , wherein the photo-sensitive polymer or the non-photo-sensitive polymer comprising polyimide, polyamide, polyvinylalcohol, polyvinylphenol, polyacrylate, epoxy, polyurethane, fluoropolymer, polysiloxane, polyester, polyacrylonitrile, polystyrene, or polyethylene. 
     
     
         4 . The dielectric layer of  claim 1 , wherein a dielectric constant of the dielectric layer is about 5.7. 
     
     
         5 . The dielectric layer of  claim 1 , wherein a dielectric constant of the dielectric layer is about 6.7. 
     
     
         6 . The dielectric layer of  claim 1 , wherein the dielectric layer is a gate dielectric layer of a transistor. 
     
     
         7 . The dielectric layer of  claim 6 , wherein a mobility μ and an on/off ratio of the transistor are 0.047 cm 2 /Vs and 10 4 -10 5  respectively. 
     
     
         8 . The dielectric layer of  claim 6 , wherein a mobility μ and an on/off ratio of the transistor are 0.059 cm 2 /Vs and 10 4  respectively. 
     
     
         9 . The dielectric layer of  claim 6 , wherein the transistor is a field effect transistor. 
     
     
         10 . The dielectric layer of  claim 6 , wherein the transistor is a thin film transistor. 
     
     
         11 . The dielectric layer of  claim 1 , wherein the dielectric layer is a dielectric layer of a capacitor. 
     
     
         12 . The dielectric layer of  claim 1 , wherein the dielectric layer is applied in high frequency devices.

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