Processes for forming electronic devices and electronic devices formed by such processes
Abstract
A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.
Claims
exact text as granted — not AI-modified1 . An electronic device formed by a process comprising comprising:
forming a first layer over a substrate, wherein the first layer includes an organic layer; and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering; wherein the active layer comprises an organic active layer.
2 . The device of claim 1 , wherein the first layer further comprises a buffer layer, a charge-blocking layer, a charge-injection layer, a charge-transport layer, or a combination thereof.
3 . The device of claim 1 , wherein the second layer includes a conductive layer.
4 . The device of claim 3 , wherein:
the electronic device includes an LED having an anode and a cathode; and the second layer is at least part of the anode or the cathode.
5 . The device of claim 1 , wherein the second layer includes an inorganic layer and an insulating layer.
6 . The device of claim 5 , wherein depositing the second layer comprises depositing the second layer directly onto the organic layer.
7 . The device of claim 1 , wherein the organic layer is at least part of an electronic component within the electronic device.
8 . An electronic device formed by a process comprising:
placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece comprises a substrate and an organic layer overlying the workpiece; generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece; sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material; and depositing a layer of the material over the organic layer.
9 . The device of claim 8 , wherein sending the ion beam comprises extracting ions from the plasma to form an ion beam.
10 . The device of claim 8 , wherein sending the ion beam comprises accelerating ions within the ion beam.
11 . The device of claim 8 , wherein placing the workpiece comprises placing the workpiece such that the workpiece does not lie along a line defined by a principal deflected angle.
12 . The device of claim 9 , wherein the organic layer comprises an organic active layer.
13 . The device of claim 12 , wherein the organic layer further comprises a buffer layer, a charge-blocking layer, a charge-injection layer, a charge-transport layer, or a combination thereof.
14 . The device of claim 8 , wherein the layer of the material includes a conductive layer.
15 . The device of claim 14 , wherein:
the electronic device includes an LED having an anode and a cathode; and the layer of the material is at least part of the anode or the cathode.
16 . The device of claim 8 , wherein the layer of the material includes an insulating layer.Join the waitlist — get patent alerts
Track US2011006292A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.