Apparatus for manufacturing group iii nitride crystals

Abstract

An apparatus for producing group III nitride crystals includes a pressure container, a reaction vessel positioned in the pressure container, a supplier for supplying an interior of the pressure container with nitrogen gas and nitrogen mixed gas at 1 to 20 MPa, a heater for heating the reaction vessel in the pressure container to at least 700° C., a power unit, a seed crystal arrangement for holding a plurality of seed crystal substrates, a dry box part disposed outside the pressure container, and raising/lowering and rotational axes disposed outside the pressure container.

1 . An apparatus for producing group III nitride crystals comprising:
 a pressure container;   a reaction vessel positioned in the pressure container;   a supplier for supplying an interior of the pressure container with nitrogen gas and nitrogen mixed gas at 1 to 20 MPa;   a heater for heating the reaction vessel in the pressure container to at least 700° C.;   a power unit;   a seed crystal arrangement for holding a plurality of seed crystal substrates;   a dry box part disposed outside the pressure container; and   raising/lowering and rotational axes disposed outside the pressure container.   
     
     
         2 . An apparatus according to  claim 1 , further comprising a plate member disposed above a part where the seed crystal substrates are placed and adapted to be introduced into a melt with the seed crystal substrates.