Grooved cmp polishing pad
Abstract
The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, W G , with any two adjacent grooves being separated from each other a landing surface having a width, W L , wherein the quotient W L /W G is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least about 10 mil and a width W G , and a spiral landing surface outlining spiral groove the having a width, W L , wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient W L /W G is less than or equal to 3.
Claims
exact text as granted — not AI-modified1 . A polishing pad suitable for use in chemical-mechanical polishing of a substrate, the pad comprising a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, W G , with any two adjacent grooves being separated by a landing surface having a width, W L , wherein the quotient W L /W G , is less than or equal to 3.
2 . The polishing pad of claim 1 wherein the plurality of grooves comprises concentric, substantially circular grooves.
3 . The polishing pad of claim 1 wherein the grooves have a depth of not more than about 50 mil.
4 . The polishing pad of claim 1 wherein the depth of each groove is in the range of about 10 to about 50 mil.
5 . The polishing pad of claim 1 wherein W L for each landing surface is not more than about 80 mil.
6 . The polishing pad of claim 1 wherein W L for each landing surface is in the range of about 30 mil to about 60 mil.
7 . The polishing pad of claim 1 wherein W G for each groove is in the range of about 20 mil to about 40 mil.
8 . The polishing pad of claim 1 wherein each groove has substantially the same depth.
9 . The polishing pad of claim 1 wherein each groove has substantially the same W G .
10 . The polishing pad of claim 1 wherein each landing surface has substantially the same W L .
11 . A polishing pad suitable for use in chemical-mechanical polishing of a substrate, the pad comprising a surface defining a spiral groove with a spiral landing surface separating the turns of the spiral groove, the spiral landing surface defining a substantially coplanar polishing surface, the groove having a depth of at least about 10 mil and a width, W G , and the landing surface having a width, W L , wherein the quotient W L /W G is less than or equal to 3.
12 . The polishing pad of claim 11 wherein the spiral groove has a depth of not more than about 50 mil.
13 . The polishing pad of claim 11 wherein the depth of the groove is in the range of about 10 to about 50 mil.
14 . The polishing pad of claim 11 wherein W L is not more than about 80 mil.
15 . The polishing pad of claim 11 wherein W L is in the range of about 30 mil to about 60 mil.
16 . The polishing pad of claim 11 wherein W G is in the range of about 20 mil to about 40 mil.
17 . The polishing pad of claim 11 wherein the quotient W L /W G is less than or equal to about 2.
18 . The polishing pad of claim 11 wherein the quotient W L /W G is less than or equal to about 1.
19 . The polishing pad of claim 1 wherein the quotient W L /W G is less than or equal to about 2.
20 . The polishing pad of claim 1 wherein the quotient W L /W G is less than or equal to about 1.Join the waitlist — get patent alerts
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