Multi-junction solar cell devices

Abstract

A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10 4 cm −1 . The lower cell structure includes a first N + type window layer comprising at least a second metal chalcogenide material and/or other semiconductor material overlying the first P absorber layer. The photovoltaic cell structure includes an upper cell structure. The upper cell structure includes a second P type absorber layer using a third semiconductor metal chalcogenide material. The second P type absorber layer is characterized by a second bandgap ranging from about 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 10 4 cm −1 . A second N + type window layer comprising a fourth metal chalcogenide material overlies the second P absorber layer. A tunneling junction layer is provided between the upper cell structure and the lower cell structure.

1 . A photovoltaic cell structure for manufacturing a photovoltaic device, the photovoltaic cell structure comprises:
 a substrate including a surface region;   a first conductor layer overlying the surface region;   a lower cell structure, the lower cell structure comprising a first P type absorber comprising at least a first metal chalcogenide material and/or other suitable semiconductor material overlying the first conductor layer, the first P type absorber material being characterized by a first bandgap ranging from 0.5 eV to 1.0 eV, a first optical absorption coefficient greater than about 10 4  cm −1 , and a first thickness ranging from 0.5 um to 2 um;   a first N +  type window layer comprising at least a second metal chalcogenide material and/or other suitable semiconductor material overlying the first P type absorber layer;   a tunneling junction layer overlying the first N +  type window layer of the lower cell, the tunneling junction layer comprising at least a p ++  type semiconductor material and an n ++  type semiconductor material;   an upper cell structure, the upper cell structure comprising:
 a second P type absorber material comprising at least a third metal chalcogenide material overlying the tunneling junction layer, the second P type absorber material being characterized by a second bandgap ranging from 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 10 4  cm −1 , a second thickness ranging from 0.5 um to 2 um; 
 a second N +  type window layer comprising at least a fourth metal chalcogenide material overlying the second absorber layer; 
 a buffer layer overlying the second N +  type window layer of the upper cell structure; the buffer layer being characterized by a resistivity greater than about 10 kohm-cm; and 
 a second conductor layer overlying the buffer layer. 
   
     
     
         2 . The structure of  claim 1  wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others. 
     
     
         3 - 5 . (canceled) 
     
     
         6 . The structure of  claim 1  wherein the first metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride. 
     
     
         7 . The structure of  claim 1  wherein the second metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or a semiconductor metal telluride, or a semiconductor metal silicide. 
     
     
         8 . The structure of  claim 1  wherein the third metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor telluride. 
     
     
         9 . The structure of  claim 1  wherein the fourth metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or a semiconductor metal telluride. 
     
     
         10 . The structure of  claim 1  wherein the first P type absorber layer comprises an iron disilicide material. 
     
     
         11 . The structure of  claim 1  wherein the first N +  type window layer comprises a zinc sulfide material. 
     
     
         12 . The structure of  claim 1  wherein the second P type absorber layer comprises a copper oxide material. 
     
     
         13 . The structure of  claim 1  wherein the second N +  window layer comprises a zinc sulfide material. 
     
     
         14 . The structure of  claim 1  wherein the first bandgap is less than the second bandgap. 
     
     
         15 . (canceled) 
     
     
         16 . The structure of  claim 1  wherein the first conductor layer comprises a transparent conducting oxide material selected from ZnO:Al, SnO:F, ITO, and others. 
     
     
         17 . (canceled) 
     
     
         18 . The structure of  claim 1  wherein the second conductor layer comprises a transparent conducting oxide material selected from ZnO:Al, SnO:F, ITO, and others. 
     
     
         19 . (canceled) 
     
     
         20 . The structure of  claim 1  wherein the tunneling junction layer provides a series connection between the upper cell structure and the lower cell structure. 
     
     
         21 . A photovoltaic cell structure for manufacturing of a photovoltaic device, the structure comprises:
 a substrate including a surface region;   a first conductor structure overlying the surface region;   a lower cell structure overlying the first conductor structure, the lower cell comprising:
 a first P type absorber layer comprising a first metal chalcogenide material and/or other semiconductor material, the first P type absorber layer being characterized by a first bandgap ranging from about 0.5 eV to 1.0 eV, a first optical absorption coefficient greater than about 10 4  cm −1  in a wavelength range comprising about 400 nm to about 800 nm; 
 a first N +  type window layer comprising a second metal chalcogenide material and/or other semiconductor material overlying the first P type absorber layer; 
 a first buffer layer overlying the first N +  type window layer; 
 a second conductor structure overlying the lower cell structure; 
   an upper cell structure overlying the second conductor structure, the upper cell structure comprising:
 a second P type absorber layer comprising a third metal chalcogenide material overlying the second conductor layer, a bandgap ranging from 1.0 eV to 2.2 eV, a second optical absorption coefficient greater than about 10 4  cm in a wavelength range comprising about 400 nm to about 800 nm characterize the second P type absorber layer; 
 a second N +  type window layer overlying the second P type absorber layer; 
 a second buffer layer overlying the second N +  type window layer of the upper cell structure; the buffer layer being characterized by a resistivity greater than about 10 k-ohm cm; and 
 a third conductor layer overlying the buffer layer. 
   
     
     
         22 . The structure of  claim 21  wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others. 
     
     
         23 - 42 . (canceled) 
     
     
         43 . A photovoltaic cell structure for manufacturing a photovoltaic device, the structure comprises:
 a substrate including a surface region;   a first photovoltaic cell structure overlying the surface region; the first photovoltaic cell structure comprising:
 a first conductor layer; 
 a first P type absorber layer overlying the first conductor layer, the first P type absorber layer comprising a first metal chalcogenide material and/or other semiconductor material, the first P type absorber layer being characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10 4  cm −1  in a wavelength range comprising about 400 nm to about 800 nm. 
 a first N +  type window layer comprising a second metal chalcogenide material and or other semiconductor material overlying the first P type absorber layer; 
 a second conductor layer overlying the first N +  type window layer; 
   a second photovoltaic cell structure; the second photovoltaic cell structure comprising:
 a third conductor layer; 
 a second P type absorber layer comprising a third metal chalcogenide material, the second P type absorber layer being characterized by a second bandgap ranging from 1.0 eV to 2.2 eV, a second optical absorption coefficient greater than about 10 4  cm in a wavelength range comprising about 400 nm to about 800 nm; 
 a second N +  type window layer overlying the second P type absorber layer; 
 a fourth conductor layer overlying the second N +  type window layer; and 
   a glue layer coupling the first photovoltaic cell structure to the second photovoltaic cell structure.   
     
     
         44 . The structure of  claim 43  wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others. 
     
     
         45 - 48 . (canceled) 
     
     
         49 . The structure of  claim 43  wherein the second metal chalcogenide material is selected from is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride. 
     
     
         50 - 54 . (canceled) 
     
     
         55 . The structure of  claim 43  wherein the second N +  window layer comprises a metal chalcogenide material selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride. 
     
     
         56 - 126 . (canceled)