Silicon single crystal pulling apparatus and manufacturing method of silicon single crystal

Abstract

Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt.

1 . A silicon single crystal pulling apparatus that pulls a silicon single crystal from a melt by Czochralski method, comprising:
 a pulling furnace;   a sample chamber that is externally attached to the pulling furnace and houses a sublimable dopant;   an insulation mechanism that thermally insulates the sample chamber from the pulling furnace; and   a supply means that supplies the sublimable dopant to the melt after deactivating insulation by the insulation mechanism.   
     
     
         2 . The silicon single crystal pulling apparatus according to  claim 1 , wherein the supply means is disposed at a position not dipped in the melt and sprays the sublimable dopant that is vaporized onto the melt. 
     
     
         3 . A manufacturing method of a silicon single crystal that grows a doped silicon single crystal by Czochralski method, the manufacturing method comprising:
 thermally insulating a sample chamber that is externally attached to a pulling furnace, from the pulling furnace, by an insulation mechanism;   followed by housing a sublimable dopant in the sample chamber and sealing the sample chamber; and   thereafter opening up the insulation mechanism to supply the sublimable dopant to a melt.   
     
     
         4 . The manufacturing method of a silicon single crystal according to  claim 3 ,
 wherein a first half of a straight body portion of the silicon single crystal is grown before opening up the insulation mechanism, and   a latter half of the straight body portion of the silicon single crystal is grown after opening up the insulation mechanism.   
     
     
         5 . The manufacturing method of a silicon single crystal according to  claim 3 ,
 wherein the sublimable dopant is at least one selected from a group consisting of arsenic, red phosphorus, and antimony.   
     
     
         6 . The manufacturing method of a silicon single crystal according to  claim 5 ,
 wherein the sublimable dopant is added in high concentration.   
     
     
         7 . A silicon single crystal ingot that is manufactured by the manufacturing method of a silicon single crystal according to  claim 3 .