Thin film transistor substrate and method for forming metal wire thereof

Abstract

The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

1 .- 13 . (canceled) 
     
     
         14 . A method for forming self-assembled monolayers (SAMs) of a thin film transistor substrate, comprising steps of:
 coating self-assembled monolayer forming material dissolved in a solvent on a substrate and heat-treating; and   depositing a copper alloy layer as a metal wiring material on the heat-treated substrate to form self-assembled monolayers having a three-dimensionally cross-linked structure between the substrate and the metal wiring,   wherein the copper alloy comprises copper and a metal that has superior anti-diffusion ability and is not significantly soluble to the substrate, and has a lower surface energy than copper.   
     
     
         15 . The method of  claim 14 ,
 wherein the metal is Ag, Mg, B, Ca, Al, Li, Np, Pu, Ce, Eu, Pr, La, Nd, Sm, Zn, or any mixture thereof.   
     
     
         16 . The method of  claim 14 , wherein the self-assembled monolayers are formed by a compound selected from the group consisting of:
 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoundecyltrimethoxysilane, aminophenyltrimethoxysilane, N-(2-aminoethylaminopropyl)trimethoxysilane, methyltrimethoxysilane, propyltriacetoxysilane, (3-mercaptopropyl)trimethoxysilane, and (3-mercaptopropyl)trimethoxysilane.   
     
     
         17 . The method of  claim 14 ,
 wherein the mixing ratio of the self-assembled monolayer forming material and the solvent is 1:20 to 1:30 by weight.   
     
     
         18 . The method of  claim 14 , wherein the heat treatment is performed at a temperature of 100 to 300.degree. C. 
     
     
         19 . The method of  claim 14 ,
 wherein the solvent is selected from the group consisting of methanol, ethanol, propanol, butanol, cellusolv, dimethylformamide, and water.