Inverted Bottom-Emitting OLED Device

Abstract

A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 10 5 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.

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         10 . An inverted bottom-emitting OLED device, comprising:
 a. a substrate;   b. one or more first electrodes driven by n-type transistors on the substrate;   c. an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 10 5  ohm-cm and a bandgap greater than 2.5 eV;   d. an organic light-emitting layer over the electron-transporting layer;   e. a hole-transporting layer over the organic emitting layer; and   f. a second electrode over the hole-transporting layer.   
     
     
         11 . The device of  claim 10  wherein the one or more first electrodes are cathodes and the second electrode is an anode. 
     
     
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