Methods and materials for cis and cigs photovoltaics

Abstract

This invention relates to processes for materials using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to CIGS, CIS or CGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate, thereby producing a material.

1 . A material made by a process comprising,
 (a) providing one or more CIGS, CIS or CGS polymeric precursor compounds or inks thereof;   (b) providing a substrate;   (c) depositing the compounds or inks onto the substrate; and   (d) heating the substrate at a temperature of from about 20° C. to about 650° C. in an inert atmosphere, thereby producing a material.   
     
     
         2 . The material of  claim 1 , wherein the polymeric precursor compound has the empirical formula Cu x (In 1-y Ga y ) v ((S 1-z Se z )R) w , wherein x is from 0.5 to 1.5, y is from 0 to 1, z is from 0 to 1, v is from 0.5 to 1.5, w is from 2 to 6, and R represents R groups, of which there are w in number, which are independently selected from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands. 
     
     
         3 . The material of  claim 1 , wherein the material is a CIGS, CIS or CGS material. 
     
     
         4 . The material of  claim 1 , wherein the substrate is heated at a temperature of from about 100° C. to about 550° C. 
     
     
         5 . The material of  claim 1 , wherein the substrate is heated at a temperature of from about 200° C. to about 400° C. 
     
     
         6 . The material of  claim 1 , wherein the depositing is done by spraying, spray coating, spray deposition, spray pyrolysis, printing, screen printing, inkjet printing, aerosol jet printing, ink printing, jet printing, stamp/pad printing, transfer printing, pad printing, flexographic printing, gravure printing, contact printing, reverse printing, thermal printing, lithography, electrophotographic printing, electrodepositing, electroplating, electroless plating, bath deposition, coating, wet coating, spin coating, knife coating, roller coating, rod coating, slot die coating, meyerbar coating, lip direct coating, capillary coating, liquid deposition, solution deposition, layer-by-layer deposition, spin casting, solution casting, and combinations of any of the forgoing. 
     
     
         7 . The material of  claim 1 , wherein the substrate is selected from the group of a semiconductor, a doped semiconductor, silicon, gallium arsenide, insulators, glass, molybdenum glass, silicon dioxide, titanium dioxide, zinc oxide, silicon nitride, a metal, a metal foil, molybdenum, aluminum, beryllium, cadmium, cerium, chromium, cobalt, copper, gallium, gold, lead, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, silver, stainless steel, steel, iron, strontium, tin, titanium, tungsten, zinc, zirconium, a metal alloy, a metal silicide, a metal carbide, a polymer, a plastic, a conductive polymer, a copolymer, a polymer blend, a polyethylene terephthalate, a polycarbonate, a polyester, a polyester film, a mylar, a polyvinyl fluoride, polyvinylidene fluoride, a polyethylene, a polyetherimide, a polyethersulfone, a polyetherketone, a polyimide, a polyvinylchloride, an acrylonitrile butadiene styrene polymer, a silicone, an epoxy, paper, coated paper, and combinations of any of the forgoing. 
     
     
         8 . The material of  claim 1 , wherein the substrate is a shaped substrate, a tube, a cylinder, a roller, a rod, a pin, a shaft, a plane, a plate, a blade, a vane, a curved surface or a spheroid. 
     
     
         9 . The material of  claim 1 , wherein the material is a semiconductor. 
     
     
         10 . The material of  claim 1 , wherein the material is a photovoltaic. 
     
     
         11 . The material of  claim 1 , wherein the material is a thin film. 
     
     
         12 . The material of  claim 1 , wherein the material has a thickness of from 0.001 to 100 micrometers. 
     
     
         13 . The material of  claim 1 , wherein the material has a thickness of from 0.1 to 10 micrometers. 
     
     
         14 . The material of  claim 1 , wherein the material is enriched or deficient in a Group 11 atom. 
     
     
         15 . The material of  claim 1 , the process further comprising an optional step of selenization or sulfurization, either before, during or after steps (c) or (d). 
     
     
         16 . A photovoltaic absorber made with a material of  claim 1 . 
     
     
         17 . A photovoltaic system for providing electrical power comprising a photovoltaic absorber according to  claim 16 . 
     
     
         18 . A photovoltaic device comprising a material made by a process of  claim 1 . 
     
     
         19 . A photovoltaic system for providing electrical power comprising a photovoltaic device according to  claim 18 . 
     
     
         20 . A method for providing electrical power comprising using a photovoltaic system according to  claim 19  to convert light into electrical energy.