Adjacent Field Alignment

Abstract

Methods for imprinting on abutted fields of a substrate are described. Generally, a first field of a substrate may be imprinted using an imprint lithography template. The template may then be placed such that a portion of the template overlaps the first field of the substrate while imprinting a second field of the substrate.

1 . A method comprising:
 imprinting, with an imprint lithography template, a first portion of polymerizable material positioned within a first field of a substrate;   separating the template from the first portion of polymerizable material forming a first patterned layer;   overlapping the template with a portion of the first field and a portion of a second field;   imprinting, with the template, a second portion of polymerizable material positioned within the second field of the substrate; and,   separating the template from the second portion of polymerizable material forming a second patterned layer.   
     
     
         2 . The method of  claim 1 , wherein the first patterned layer includes a first residual layer and the second patterned layer includes a second residual layer. 
     
     
         3 . The method of  claim 2 , wherein thickness of the first residual layer and the second residual layer is substantially similar. 
     
     
         4 . The method of  claim 2 , wherein volume of the first portion of polymerizable material is determined to minimize thickness of the first residual layer. 
     
     
         5 . The method of  claim 4 , wherein thickness of the first residual layer is less than approximately 25 nm. 
     
     
         6 . The method of  claim 2 , further comprising:
 determining a drop pattern for dispensing of the first portion of polymerizable material on the first field of the substrate;   adjusting the drop pattern such that drops of the drop pattern are offset a distance towards a center of the drop pattern, wherein distance establishes a perimeter at edges of the drop pattern removed of drops; and,   dispensing polymerizable material on the first field of the substrate using the adjusted drop pattern.   
     
     
         7 . The method of  claim 6 , wherein the drop pattern for the first portion is determined by correlating features of the template with a required thickness of the first residual layer such that drops of polymerizable material dispensed on the substrate are spatially correlated to locations of features of the template and insufficient quantity to fill a volume between the template and the substrate during imprinting. 
     
     
         8 . The method of  claim 6 , wherein the distance is substantially similar at all edges of the drop pattern. 
     
     
         9 . The method of  claim 6 , wherein the distance is different at least one edge of the drop pattern. 
     
     
         10 . The method of  claim 6 , wherein the distance is greater at an edge of the drop pattern wherein a prior imprinted field is known to be located. 
     
     
         11 . The method of  claim 1 , further comprising:
 imprinting a plurality of fields using a stepping pattern to equalize the number of times an edge of a field is abutted to a previously imprinted field.   
     
     
         12 . The method of  claim 11 , wherein the stepping pattern proceeds in a spiral-like pattern. 
     
     
         13 . The method of  claim 11 , wherein the abutted field provides containment of polymerizable material for the field being imprinted. 
     
     
         14 . A method, comprising:
 imprinting a first field using an imprint lithography template to form a first patterned layer having a first residual layer, the imprint lithography template having a first side and a second side, the first side having a plurality of features and at least one substantially planar portion adjacent to the features;   positioning the imprint lithography template such that features of the first side are in superimposition with a second field and the planar portion is in superimposition with the first patterned layer; and,   imprinting the second field to form a second patterned layer having a second residual layer.   
     
     
         15 . The method of  claim 14 , wherein thickness of the first residual layer is substantially similar to thickness of the second residual layer. 
     
     
         16 . The method of  claim 14 , wherein thickness of the first residual layer is less than about 5 μm. 
     
     
         17 . The method of  claim 14 , wherein a second planar portion of the imprint lithography template is in superimposition with a third patterned layer. 
     
     
         18 . The method of  claim 14 , wherein the planar portion is in superimposition with the first field during imprinting of the second field and at a distance from the first residual layer. 
     
     
         19 . A method for forming a patterned layer with an imprint lithography template, comprising:
 positioning the imprint lithography template over polymerizable material deposited on a first field of a substrate;   reducing the distance between the template and the substrate such that the template contacts the polymerizable material;   solidifying the polymerizable material;   separating the template from the polymerizable material forming a first patterned layer;   positioning the imprint lithography template over the first patterned layer and polymerizable material deposited on a second field of the substrate;   reducing the distance between the template and the substrate such that the template contacts the polymerizable material positioned on the second field;   solidifying the polymerizable material;   separating the template from the polymerizable material forming a second patterned layer.   
     
     
         20 . The method of  claim 19 , wherein thickness of residual layers of the first and second patterned layers are substantially similar.