Method for forming a compound semi-conductor thin-film

Abstract

A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.

1 . A photovoltaic device, comprising:
 a substrate;   a first electrode disposed on the substrate;   a light absorbing layer that includes a Reacted Target Physical Deposition (RTPD) compound semiconductor thin-film; and   a second electrode disposed over the light absorbing layer.   
     
     
         2 . The photovoltaic device of  claim 1  wherein the (RTPD) compound semiconductor thin-film includes II-VI compound semiconductor materials. 
     
     
         3 . The photovoltaic device of  claim 2  wherein the II-VI compound semiconductor materials are selected from the group consisting of Cd—S, Cd—Se, Cd—Te, Cd—Zn—Te, Cd—Hg—Te, and Cu—In—Se. 
     
     
         4 . A target for use in a fabricating a thin-film, comprising:
 a Reacted Target Physical Deposition (RTPD) compound semiconductor material having a prescribed bandgap.   
     
     
         5 . The target of  claim 4  further comprising a dopant that includes an alkali or halogen element.