Resist pattern and reflow technology

Abstract

A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.

1 - 6 . (canceled) 
     
     
         7 . A reflow stabilizing solution to stabilize a photoresist during reflow, comprising:
 a solvent; and   a non-volatile component comprising a polymer.   
     
     
         8 . The reflow stabilizing solution of  claim 7 , wherein the polymer is a homopolymer or a copolymer. 
     
     
         9 . The reflow stabilizing solution of  claim 7 , wherein the solvent is water. 
     
     
         10 - 55 . (canceled) 
     
     
         56 . The reflow stabilizing solution of  claim 7 , wherein the polymer is polyvinyl alcohol or polyvinyl pyrrolidone. 
     
     
         57 . The reflow stabilizing solution of  claim 7 , wherein the polymer is an acrylic polymer. 
     
     
         58 . The reflow stabilizing solution of  claim 7 , wherein the polymer further comprises cross-links throughout the polymer. 
     
     
         59 . The reflow stabilizing solution of  claim 8 , wherein the polymer is polyhydroxyethylmethacrylate, polymethylmethacrylate, substituted polymethylmethacrylate, or polystyrene. 
     
     
         60 . The reflow stabilizing solution of  claim 7 , wherein the polymer further comprises an acidic functional group. 
     
     
         61 . A reflow stabilizing solution to stabilize a photoresist during reflow, comprising:
 a solvent selected from the group consisting of water, ethyl lactate and methylamylketone;   a polymeric precursor comprising at least one compound selected from the group consisting of benzoyl peroxide, hexamethoxymethirol melamine and tetramethoxyglycouril;   a non-volatile polymer selected from the group consisting of polyvinyl alcohol, polyvinyl pyrrolidone, polyhydroxyethylmethacrylate, polymethylmethacrylate, substituted polymethylmethacrylate, and polystyrene; and   an acidic additive.   
     
     
         62 . The reflow stabilizing solution of  claim 7 , wherein the non-volatile polymer is polyvinyl alcohol. 
     
     
         63 . A semiconductor construct comprising:
 a substrate;   a reflowed photoresist pattern over the substrate, the reflowed photoresist pattern comprising at least two adjacent pattern structures formed over a surface of the substrate; and   a reflow stabilizing solution provided between the at least two adjacent pattern structures to stabilize the photoresist pattern during reflow, the reflow stabilizing solution comprising:
 a solvent; and 
 a non-volatile component comprising a polymer. 
   
     
     
         64 . The semiconductor construct of  claim 63 , wherein the polymer is a homopolymer or a copolymer. 
     
     
         65 . The semiconductor construct of  claim 63 , wherein the solvent is water. 
     
     
         66 . The semiconductor construct of  claim 63 , wherein the polymer is polyvinyl alcohol or polyvinyl pyrrolidone. 
     
     
         67 . The semiconductor construct of  claim 63 , wherein the polymer is an acrylic polymer. 
     
     
         68 . The semiconductor construct of  claim 63 , wherein the polymer further comprises cross-links throughout the polymer. 
     
     
         69 . The semiconductor construct of  claim 64 , wherein the polymer is polyhydroxyethylmethacrylate, polymethylmethacrylate, substituted polymethylmethacrylate, or polystyrene. 
     
     
         70 . The semiconductor construct of  claim 63 , wherein the polymer further comprises an acidic functional group. 
     
     
         71 . The semiconductor construct of  claim 63 , wherein the reflow stabilizing solution further comprises a polymeric precursor comprising at least one compound selected from the group consisting of benzoyl peroxide, hexamethoxymethirol melamine and tetramethoxyglycouril. 
     
     
         72 . The semiconductor construct of  claim 62 , wherein the reflow stabilizing solution further comprises an acidic additive.