Contact barrier layer deposition process

Abstract

A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the gaseous ions towards a titanium target, sputtering the titanium atoms from the titanium target with the gaseous ions, ionizing the titanium atoms using a plasma, and depositing the ionized titanium atoms onto the substrate to form the layer of Ti. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process. The newly completed barrier layer is annealed in the presence of nitrogen at a temperature of between about 500° C. to about 750° C.

What is claimed is: 
     
         1 . A system for depositing a barrier layer onto a substrate, comprising:
 an ionized metal plasma (IMP) chamber configured to deposit a layer of Ti onto the substrate;   a metal organic chemical vapor deposition (MOCVD) chamber operatively interfaced with the IMP chamber and configured to deposit a first layer of TiN onto the layer of Ti; and   a thermal chemical vapor deposition (CVD) chamber operatively interfaced with the MOCVD chamber, wherein the CVD chamber is configured to deposit a second layer of TiN onto the first layer of TiN, wherein the CVD chamber is further configured to supply nitrogen to the barrier layer and heat the barrier layer to a temperature of between about 500° C. to about 750° C.   
     
     
         2 . A system for depositing a barrier layer onto a substrate, comprising:
 an ionized metal plasma (IMP) chamber configured to deposit a layer of Ti onto the substrate;   a metal organic chemical vapor deposition (MOCVD) chamber operatively interfaced with the IMP chamber and configured to deposit a first layer of TiN onto the layer of Ti;   a thermal chemical vapor deposition (CVD) chamber operatively interfaced with the MOCVD chamber and configured to deposit a second layer of TiN onto the first layer of TiN; and   an annealing chamber operatively configured to supply nitrogen to the barrier layer and operate in a rapid thermal processing (RTP) mode to heat the barrier layer to a temperature of between about 550° C. to about 750° C. for a time period of between about 10 seconds to about 120 seconds.   
     
     
         3 . A system for depositing a barrier layer onto a substrate, comprising:
 an ionized metal plasma (IMP) chamber configured to deposit a layer of Ti onto the substrate;   a metal organic chemical vapor deposition (MOCVD) chamber operatively interfaced with the IMP chamber and configured to deposit a first layer of TiN onto the layer of Ti;   a thermal chemical vapor deposition (CVD) chamber operatively interfaced with the MOCVD chamber and configured to deposit a second layer of TiN onto the first layer of TiN; and   an annealing chamber operatively configured to supply nitrogen to the barrier layer and operate in a furnace heating mode to heat the barrier layer to a temperature of between about 500° C. to about 700° C. for a time period of between about 20 seconds to about 5 minutes.   
     
     
         4 . A system for depositing a barrier layer onto a substrate, comprising:
 an ionized metal plasma (IMP) chamber configured to deposit a layer of titanium (Ti) onto the substrate;   a metal organic chemical vapor deposition (MOCVD) chamber operatively interfaced with the IMP chamber and configured to deposit a first layer of titanium nitride (TiN) onto the layer of Ti;   a thermal chemical vapor deposition (CVD) chamber operatively interfaced with the MOCVD chamber and configured to deposit a second layer of TiN onto the first layer of TiN using titanium tetrachloride (TiCl4) gas and ammonia (NH3); and   an annealing chamber operatively configured to perform an annealing process on the barrier layer in the presence of nitrogen (N2).