Dielectric-layer-coated substrate and installation for production thereof

Abstract

The invention relates to a substrate ( 1 ), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam ( 3 ) coming from an ion source ( 4 ), characterized in that said dielectric layer exposed to the ion beam is crystallized.

1 . A process for depositing dielectric thin-film layer(s) on a substrate comprising depositing at least one dielectric thin-film layer on a substrate by sputtering in a sputtering chamber, wherein at least one ion beam coming from an ion source is present in the sputtering chamber and the at least one ion beam crystallizes the dielectric thin-film layer(s). 
     
     
         2 . The process as claimed in  claim 1 , wherein the ion beam is an oxygen ion beam. 
     
     
         3 . The process as claimed in  claim 1 , wherein the ion beam is created with an energy of between 200 and 2000 eV. 
     
     
         4 . The process as claimed in  claim 1 , wherein the dielectric thin-film layer(s) has a very low roughness. 
     
     
         5 . The process as claimed in  claim 1 , wherein the ion beam is present in the sputtering chamber simultaneously with the deposition of the dielectric thin-film layer(s). 
     
     
         6 . The process as claimed in  claim 1 , wherein the ion beam is present in the sputtering chamber after the dielectric thin-film layer(s) has been deposited. 
     
     
         7 . The process as claimed in  claim 1 , wherein the ion beam is directed onto the substrate along a direction making a nonzero angle with the surface of the substrate. 
     
     
         8 . The process as claimed in  claim 1 , wherein the ion beam is directed onto at least one cathode along a direction making a nonzero angle with the surface of the cathode. 
     
     
         9 . The process as claimed in  claim 1 , wherein the ion beam is created from a linear source. 
     
     
         10 . The process as claimed in  claim 1 , wherein at least one functional layer is deposited on said dielectric thin-film layer and said functional layer undergoes crystallization. 
     
     
         11 . The process as claimed in  claim 10 , wherein the at least one functional layer is based on silver and the size of the crystallites of the functional layer is increased by 30 to 40%. 
     
     
         12 . The process as claimed in  claim 1 , wherein the dielectric thin-film layer is based on zinc oxide. 
     
     
         13 . The process as claimed in  claim 1 , wherein the ion beam is created in the sputtering chamber from a linear ion source simultaneously with the deposition of the dielectric thin-film layer. 
     
     
         14 . The process as claimed in  claim 13 , further comprising the dielectric thin-film layer undergoing an additional treatment with at least one additional ion beam. 
     
     
         15 . The process as claimed in  claim 1 , wherein the sputtering is magnetically enhanced sputtering or reactive sputtering. 
     
     
         16 . The process as claimed in  claim 1 , wherein the sputtering occurs in the presence of oxygen and/or nitrogen. 
     
     
         17 . The process as claimed in  claim 7 , wherein the ion beam is directed onto the substrate along a direction making an angle of 10 to 80° with the surface of the substrate. 
     
     
         18 . The process as claimed in  claim 8 , wherein the ion beam is directed onto the cathode along a direction making an angle of 10 to 80° with the surface of this cathode. 
     
     
         19 . The process as claimed in  claim 10 , wherein the at least one functional layer is based on silver.