Solar cell

Abstract

A solar cell is shown. The solar cell includes a semiconductor substrate of a first conductive type; a first amorphous semiconductor layer including a crystalline portion; a first electrode portion on the semiconductor substrate; and a second electrode portion on the semiconductor substrate.

What is claimed is: 
     
         1 - 23 . (canceled) 
     
     
         24 . A solar cell, comprising:
 a semiconductor substrate of a first conductive type;   a first passivation layer of amorphous silicon including a crystal portion on the semiconductor substrate;   an emitter layer of amorphous silicon on the first passivation layer;   a first electrode portion on the emitter layer; and   a second electrode portion on the semiconductor substrate.   
     
     
         25 . The solar cell of  claim 24 , further comprising a back surface field layer including a crystal portion on the semiconductor substrate. 
     
     
         26 . The solar cell of  claim 25 , wherein the back surface field layer has a crystallinity greater than the crystallinity of the emitter layer. 
     
     
         27 . The solar cell of  claim 26 , wherein the crystallinity of the back surface field layer is equal to or less than about 30%. 
     
     
         28 . The solar cell of  claim 24 , further comprising a second passivation layer including a crystal portion and a back surface field layer on the semiconductor substrate. 
     
     
         29 . The solar cell of  claim 28 , wherein the back surface field layer or second passivation layer has a crystallinity greater than the crystallinity of the emitter layer. 
     
     
         30 . The solar cell of  claim 29 , wherein the crystallinity of the back surface field layer or the second passivation layer is equal to or less than about 30%. 
     
     
         31 . The solar cell of  claim 24 , wherein the first passivation layer has a crystallinity equal to or less than about 10%. 
     
     
         32 . The solar cell of  claim 25 , wherein the emitter layer and the back surface field layer are positioned on the rear surface of the semiconductor substrate. 
     
     
         33 . The solar cell of  claim 25 , wherein the emitter layer is positioned on a front surface of the semiconductor substrate, and the back surface field layer is positioned on a rear surface of the semiconductor substrate. 
     
     
         34 . The solar cell of  claim 24 , at least one of the first and second electrode portions comprises a transparent conductive layer and a metal electrode. 
     
     
         35 . A solar cell, comprising:
 a non-amorphous semiconductor substrate of a first conductive type;   at least a first semiconductor layer on the non-amorphous semiconductor substrate, the first semiconductor layer including at least one portion that is crystalline and another portion that is amorphous;   a first electrode on the semiconductor substrate; and   a second electrode on the semiconductor substrate.   
     
     
         36 . The solar cell of  claim 35 , wherein the first semiconductor layer is intrinsic. 
     
     
         37 . The solar cell of  claim 36 , wherein a crystallinity of the first semiconductor layer is equal to or less than about 10%. 
     
     
         38 . The solar cell of  claim 36 , further comprising another semiconductor layer having a second conductive type opposite the first conductive type on the first semiconductor layer, wherein a crystallinity of the first semiconductor layer is equal to or less than about 10%. 
     
     
         39 . The solar cell of  claim 36 , further comprising another semiconductor layer having the first conductivity type on the first semiconductor layer, wherein a crystallinity of the first semiconductor layer is equal to or less than about 30%. 
     
     
         40 . (canceled) 
     
     
         41 . The solar cell of  claim 35 , wherein the first semiconductor layer is a second conductive type opposite the first conductive type. 
     
     
         42 . The solar cell of  claim 41 , wherein a crystallinity of the first semiconductor layer is equal to or less than about 10%. 
     
     
         43 . The solar cell of  claim 35 , wherein the first semiconductor is the first conductive type. 
     
     
         44 . The solar cell of  claim 43 , wherein a crystallinity of the first semiconductor layer is equal to or less than about 30%.