Crystal growth method and apparatus

Abstract

A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

1 . A crystal growth method for forming a semiconductor film, the method comprising:
 passing raw material gas and carrier gas from a first side in a direction substantially parallel to a major surface of a substrate, the center of the substrate being located on a side nearer to the first side than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.   
     
     
         2 . The crystal growth method according to  claim 1 , wherein the substrate is rotated on its axis. 
     
     
         3 . The crystal growth method according to  claim 1 , wherein entirety of the substrate is substantially located on the side nearer to the first side than the position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized. 
     
     
         4 . The crystal growth method according to  claim 1 , wherein a region where a distribution of the growth rate becomes substantially linear is formed on the side nearer to the first side than the position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized. 
     
     
         5 . The crystal growth method according to  claim 4 , wherein the center of the substrate is located in the region. 
     
     
         6 . The crystal growth method according to  claim 1 , wherein a temperature on the first side is kept lower than a temperature of the substrate. 
     
     
         7 . The crystal growth method according to  claim 1 , wherein a region where the growth rate is steeply decreased toward the first side is provided on the side nearer to the first side than the center of the substrate. 
     
     
         8 . The crystal growth method according to  claim 1 , wherein the semiconductor film contains aluminum. 
     
     
         9 . The crystal growth method according to  claim 1 , wherein the semiconductor film contains magnesium. 
     
     
         10 . The crystal growth method according to  claim 1 , wherein passing raw material gas and carrier gas to a major surface of the substrate is performed while revolving the substrate about a revolving axis, and the first side is the revolving axis side. 
     
     
         11 . The crystal growth method according to  claim 10 , wherein the substrate is rotated on its axis. 
     
     
         12 . The crystal growth method according to  claim 10 , wherein entirety of the substrate is substantially located on the side nearer to the first side than the position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized. 
     
     
         13 . The crystal growth method according to  claim 10 , wherein a region where a distribution of the growth rate becomes substantially linear is formed on the side nearer to the first side than the position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized. 
     
     
         14 . The crystal growth method according to  claim 13 , wherein the center of the substrate is located in the region. 
     
     
         15 . The crystal growth method according to  claim 10 , wherein a temperature on the first side is kept lower than a temperature of the substrate. 
     
     
         16 . The crystal growth method according to  claim 10 , wherein a region where the growth rate is steeply decreased toward the first side is provided on the side nearer to the first side than the center of the substrate. 
     
     
         17 . The crystal growth method according to  claim 10 , wherein the semiconductor film contains aluminum. 
     
     
         18 . The crystal growth method according to  claim 10 , wherein the semiconductor film contains magnesium.