Semiconductor device and method of fabricating the same

Abstract

A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first, second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.

1 . A method of fabricating a semiconductor device comprising:
 preparing a semiconductor substrate on which are formed a first conductive plate, a first bottom interconnection electrically connected to the first conductive plate, and a second bottom interconnection insulated from the first conductive plate;   forming a second conductive plate with a first insulation layer interposed on the first conductive plate;   forming a third conductive plate with a second insulation layer interposed on the second conductive plate;   forming a third insulation layer on the semiconductor substrate;   performing an etch process to form a first groove and a second groove, the first groove exposing the second bottom interconnection and the second conductive plate, and the second groove exposing the first bottom interconnection and the third conductive plate; and   filling the first groove with conductive material to form a fourth conductive plate on the third conductive plate,   wherein the first conductive plate and the third conductive plate are electrically connected, and the second conductive plate and the fourth conductive plate are electrically connected.   
     
     
         2 . The method of  claim 1 , wherein forming the fourth conductive plate comprises:
 forming a first top interconnection electrically connected to the fourth conductive plate and the second bottom interconnection in the first groove, and   forming a second top interconnection electrically connected to the first bottom interconnection on the second groove.   
     
     
         3 . A method of fabricating a semiconductor device comprising:
 preparing a semiconductor substrate on which are formed a first conductive plate, a first bottom interconnection electrically connected to the first conductive plate, and a second bottom interconnection insulated from the first conductive plate;   forming a second conductive plate with a first insulation layer interposed on the first conductive plate;   forming a third conductive plate with a second insulation layer interposed on the second conductive plate;   forming a third insulation layer on the semiconductor substrate;   performing an etch process to form a first groove and a second groove, the first groove exposing the second bottom interconnection and the second conductive plate, and the second groove exposing the first bottom interconnection and the third conductive plate; and   filling the first groove with conductive material to form a fourth conductive plate on the third conductive plate,   wherein the first conductive plate, the third conductive plate, and the fourth conductive plate are electrically connected.   
     
     
         4 . The method of  claim 3 , wherein forming the fourth conductive plate comprises:
 forming a second top interconnection electrically connected to the second bottom interconnection in the first groove, and   forming a first top interconnection electrically connected to the fourth conductive plate and the first bottom interconnection in the second groove.   
     
     
         5 . A method of fabricating a semiconductor device comprising:
 preparing a semiconductor substrate on which are formed a first conductive plate, a first bottom interconnection electrically connected to the first conductive plate, and a second bottom interconnection insulated from the first conductive plate;   forming a second conductive plate with a first insulation layer interposed on the first conductive plate;   forming a third conductive plate with a second insulation layer interposed on the second conductive plate;   forming a third insulation layer on the semiconductor substrate;   performing an etch process to form a first groove and a second groove, the first groove exposing the second bottom interconnection and the third conductive plate, and the second groove exposing the first bottom interconnection and the second conductive plate; and   filling the first groove with conductive material to form a fourth conductive plate on the third conductive plate,   wherein the first conductive plate, the second conductive plate, and the fourth conductive plate are electrically connected.   
     
     
         6 . The method of  claim 5  wherein, forming the fourth conductive plate comprises:
 forming a second top interconnection electrically connected to the second bottom in the first groove, and 
 forming a first top interconnection electrically connected to the fourth conductive plate and the first bottom interconnection in the second groove.