Patterning Method for Carbon-Based Substrate

Abstract

A patterning method for a carbon-based substrate is provided. The patterning method for the carbon-based substrate includes the following steps. The carbon-based substrate is provided. An atmospheric pressure plasma is produced from a plasma gas under an open air environment. The plasma gas includes oxygen. The carbon-based substrate is etched by the atmospheric pressure plasma.

1 . A patterning method for a carbon-based substrate, comprising:
 providing a carbon-based substrate;   producing an atmospheric pressure plasma from a plasma gas under an open air environment, wherein the plasma gas comprises oxygen; and   etching the carbon-based substrate by the atmospheric pressure plasma.   
     
     
         2 . The patterning method according to  claim 1 , wherein in the step of providing the carbon-based substrate, the carbon-based substrate is a transparent carbon nanostructure-based thin film. 
     
     
         3 . The patterning method according to  claim 1 , wherein before the step of producing the atmospheric pressure plasma, the patterning method further comprises:
 providing a hard mask having a hollowed pattern; and   attaching the hard mask to the carbon-based substrate, wherein the hollowed pattern exposes a portion of the carbon-based substrate.   
     
     
         4 . The patterning method according to  claim 3 , wherein in the step of providing the hard mask, the hard mask is made from metal, ceramic or glass. 
     
     
         5 . The patterning method according to  claim 3 , wherein in the step of providing the hard mask, the hollowed pattern is formed by way of a mechanical cutting. 
     
     
         6 . The patterning method according to  claim 3 , wherein in the step of providing the hard mask, the hollowed pattern is formed by way of a laser cutting. 
     
     
         7 . The patterning method according to  claim 3 , wherein after the step of etching the carbon-based substrate, the patterning method further comprises:
 removing the hard mask from the carbon-based substrate.   
     
     
         8 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the plasma gas further comprises nitrogen. 
     
     
         9 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the plasma gas is a clean dry air (CDA). 
     
     
         10 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the atmospheric pressure plasma is produced from an arc jet plasma generator. 
     
     
         11 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the atmospheric pressure plasma is produced from a nonthermal dielectric barrier discharges (DBD) plasma generator. 
     
     
         12 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the atmospheric pressure plasma is a dotted plasma. 
     
     
         13 . The patterning method according to  claim 1 , wherein in the step of producing the atmospheric pressure plasma, the atmospheric pressure plasma is a linear plasma. 
     
     
         14 . The patterning method according to  claim 1 , wherein in the step of etching the carbon-based substrate, the atmospheric pressure plasma etches the carbon-based substrate through scanning. 
     
     
         15 . The patterning method according to  claim 1 , wherein in the step of etching the carbon-based substrate, the atmospheric pressure plasma and the carbon-based substrate generate a chemical reaction, so that a portion of the carbon-based substrate contacting the atmospheric pressure plasma forms a vaporizable air.