Semiconductor Component and Method of Manufacture

Abstract

A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

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         26 . A semiconductor component, comprising:
 a substrate;   a first passive circuit element at a first level above the substrate; and   a second passive circuit element at a second level above the first level, wherein at least one of the first or second passive circuit elements comprises a damascene structure.   
     
     
         27 . The semiconductor component of  claim 26 , wherein a conductor of the first passive circuit element contacts a conductor of the second passive circuit element. 
     
     
         28 . The semiconductor component of  claim 27 , wherein the first passive circuit element is a first energy storage element and the second passive circuit element is a second energy storage element. 
     
     
         29 . A semiconductor component, comprising:
 first and second vertical circuit levels;   a first passive circuit element at the first vertical circuit level, wherein a portion of the first passive circuit element is at the second vertical circuit level; and   a second passive circuit element at the second circuit level.   
     
     
         30 . The semiconductor component of  claim 29 , wherein the first passive circuit element is a capacitor having first and second conductors and the second passive circuit element is an inductor, and wherein the first conductor is the portion of the first passive circuit element that is at the second vertical circuit level. 
     
     
         31 . The semiconductor component of  claim 28 , wherein the first energy storage element is a capacitor and the second energy storage element is an inductor. 
     
     
         32 . The semiconductor component of  claim 28 , wherein the first energy storage element is an inductor and the second energy storage element is a capacitor. 
     
     
         33 . The semiconductor component of  claim 28 , further including a third vertical circuit level and a third passive circuit element at the third vertical circuit level. 
     
     
         34 . The semiconductor component of  claim 33 , wherein the third passive circuit element is a resistor. 
     
     
         35 . The semiconductor component of  claim 34 , further including an active semiconductor device formed in the substrate. 
     
     
         36 . The semiconductor component of  claim 29 , further including a third passive circuit element formed between the substrate and the first vertical circuit level. 
     
     
         37 . The semiconductor component of  claim 36 , wherein the third passive circuit element is a resistor. 
     
     
         38 . The semiconductor component of  claim 37 , wherein the first passive circuit element is an inductor and the second passive circuit element is a capacitor. 
     
     
         39 . The semiconductor component of  claim 37 , wherein the first passive circuit element is a capacitor and the second passive circuit element is an inductor. 
     
     
         40 . The semiconductor component of  claim 29 , wherein the first passive circuit element comprises copper. 
     
     
         41 . A semiconductor component, comprising:
 a substrate;   a first layer of dielectric material over the substrate;   a first layer of electrically conductive material over the first layer of dielectric material;   a second layer of dielectric material over the first layer of electrically conductive material;   a second layer of electrically conductive material over the second layer of dielectric material, wherein the first layer of electrically conductive material, the second layer of dielectric material, and the second layer of electrically conductive material form a capacitor;   a third layer of dielectric material over the second layer of conductive material;   a fourth layer of dielectric material over the third layer of conductive material; and   a damascene structure formed from the third and fourth layers of dielectric material, the damascene structure comprising an opening having copper formed therein.   
     
     
         42 . The semiconductor component of  claim 41 , wherein the first and second layers of electrically conductive material comprise aluminum. 
     
     
         43 . The semiconductor component of  claim 41 , further including an active device formed in the substrate.