Method of manufacturing semiconductor device, mask and semiconductor device

Abstract

A method of manufacturing a semiconductor device answerable to refinement of circuits by correctly connecting adjacent small patterns with each other with excellent reproducibility in connective exposure and a semiconductor device manufactured by this method are proposed. According to this method of manufacturing a semiconductor device, connective exposure is performed by dividing a pattern formed on a semiconductor substrate into a plurality of patterns and exposing the plurality of divided patterns in a connective manner, by forming marks for adjusting arrangement of the patterns to be connected with each other on the semiconductor substrate before exposing patterns of a semiconductor element and connectively exposing the patterns of the semiconductor element in coincidence with the marks for adjusting arrangement.

1 - 12 . (canceled) 
     
     
         13 . A semiconductor device being larger in size than the size of an exposable region of an exposer, wherein
 marks including at least one mark different in size from the other marks, for adjusting arrangement of patterns to be connected with each other on a substrate before exposing patterns of a semiconductor element, wherein   said marks for adjusting arrangement through aliment said one mark and other mark are formed on a substrate for adjusting arrangement of an exposed pattern is arranged.   
     
     
         14 . The semiconductor device according to  claim 13 ,
 forming said marks for adjusting arrangement on either an X-dicing region or a Y-dicing region of said semiconductor substrate.   
     
     
         15 . The semiconductor device according to  claim 13 ,
 arranging said marks for adjusting arrangement in an array grid for arraying product chips in a semiconductor wafer.   
     
     
         16 . The semiconductor device according to  claim 13 ,
 arranging said marks for adjusting arrangement on a region out of an array grid in a semiconductor wafer.