Lower chamber heaters for improved etch processes

Abstract

A method of improving a plasma etch chamber by installing heaters on outer surfaces. A method of improving STI etch. A method of improving STI etch in a Hitachi M700 series etcher.

1 . A plasma etching chamber, comprising:
 heaters coupled to a lower portion of said plasma etching chamber; and   heaters coupled to a wafer tunnel of said plasma etching chamber.   
     
     
         2 . The plasma etching chamber of  claim 1  where said heaters are blanket resistance heaters. 
     
     
         3 . The plasma etching chamber of  claim 2  where said blanket resistance heaters are manufactured by TGM company. 
     
     
         4 . The plasma etching chamber of  claim 1  where said plasma etching chamber is a Hitachi M700 series etch chamber. 
     
     
         5 . The plasma etching chamber of  claim 1  where said plasma etching chamber is a Hitachi aluminum metal etching chamber. 
     
     
         6 . A method for improving the performance of a plasma etch, comprising:
 installing heaters on a lower outside surface of a plasma etching chamber; and   heating said lower outside surface of said plasma etching chamber to a temperature of at least 35 C.   
     
     
         7 . The method of  claim 6  where said plasma etch is an STI etch and where said plasma etching chamber is a Hitachi M700 series etch chamber. 
     
     
         8 . The method of  claim 6  where said heaters are blanket resistance heaters. 
     
     
         9 . The method of  claim 8  where said blanket resistance heaters are manufactured by TGM company. 
     
     
         10 . The method of  claim 6  where said temperature is about 65 C. 
     
     
         11 . The method of  claim 7  where said lower outside surface includes a lower outside surface of said etching chamber and an outside surface of a wafer tunnel. 
     
     
         12 . The method of  claim 6  where said plasma etch is an aluminum etch in a Hitachi etching chamber. 
     
     
         13 . A method for improving an STI etch, comprising:
 installing heaters on an outside surface of an STI etching chamber; and   heating said outside surface of said STI etching chamber to a temperature of at least 35 C.   
     
     
         14 . The method of  claim 13  where said STI etching chamber is a Hitachi M700 series etch chamber. 
     
     
         15 . The method of  claim 13  where said heaters are blanket resistance heaters. 
     
     
         16 . The method of  claim 15  where said blanket resistance heaters are manufactured by TGM company. 
     
     
         17 . The method of  claim 13  where said temperature is about 65 C. 
     
     
         18 . The method of  claim 13  where said outside surface includes an outside surface of said etching chamber and an outside surface of a wafer tunnel. 
     
     
         19 . The method of  claim 14  where said outside surface includes a lower outside surface of said etching chamber and an outside surface of a wafer tunnel.