Chemical vapor deposition reactor having multiple inlets

Abstract

A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

1 . A method for chemical vapor deposition, the method comprising:
 rotating wafer carriers within a plurality of corresponding chambers of a reactor; and   controllably supplying a common reactant gas to each chamber independently of each other.   
     
     
         2 . The method of  claim 1 , further comprising removing the common reactant gas from the chambers via a common gas exhaust system. 
     
     
         3 . The method of  claim 1 , wherein the supplying further comprises supplying gas to each chamber at different flows. 
     
     
         4 . The method of  claim 1 , wherein the supplying further comprises supplying gas to each chamber simultaneously. 
     
     
         5 . The method of  claim 1 , wherein the supplying further comprises controlling an amount of gas provided to each chamber. 
     
     
         6 . The method of  claim 1 , wherein the method is applied to growth of different materials including group III-nitride, all other group III-V compounds, oxides, nitrides or group V epitaxy.