System and method for forming an integrated barrier layer

Abstract

An apparatus for processing a substrate is provided. The apparatus includes a process chamber, and a dual-mode gas distribution plate disposed within the process chamber. The dual-mode gas distribution plate comprises a first gas distribution zone disposed in a center of the gas distribution plate, and a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process, and the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process.

1 . An apparatus for processing a substrate, comprising:
 a process chamber; and   a dual-mode gas distribution plate disposed within the process chamber, the dual-mode gas distribution plate having:
 a first gas distribution zone disposed in a center of the gas distribution plate; and 
 a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein: 
 the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process; and 
 the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process. 
   
     
     
         2 . The apparatus of  claim 1 , wherein the valve system comprises one or more electronic control valves. 
     
     
         3 . The apparatus of  claim 2 , wherein each of the one or more electronic control valves deliver pulses of the first gas in intervals of less than about 1 second to about 2 seconds. 
     
     
         4 . The apparatus of  claim 1 , wherein the first gas distribution zone has a center opening and the second distribution zone has a plurality of openings radially dispersed around the center opening. 
     
     
         5 . The apparatus of  claim 1 , further comprising:
 a seal disposed between the first gas distribution zone and the second gas distribution zone.   
     
     
         6 . The apparatus of  claim 1 , wherein the second gas distribution zone is in fluid communication with at least two gas sources. 
     
     
         7 . The apparatus of  claim 6 , wherein the at least two gas sources are coupled to a mixing chamber disposed between the flow controller and the second gas distribution zone. 
     
     
         8 . The apparatus of  claim 6 , wherein one of the at least two gas sources comprises a titanium containing precursor. 
     
     
         9 . The apparatus of  claim 6 , wherein the valve system is coupled to a tungsten containing gas source and a reducing gas source. 
     
     
         10 . An apparatus for processing a substrate, comprising:
 a process chamber; and   a dual-mode gas distribution plate disposed within the process chamber, the dual-mode gas distribution plate comprising:
 a first gas distribution zone having an opening in a center of the gas distribution plate; and 
 a second gas distribution zone having a plurality of openings surrounding the opening in the center of the gas distribution plate, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein: 
 the first gas distribution zone is coupled to an electronic valve to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process; and 
 the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process. 
   
     
     
         11 . The apparatus of  claim 10 , wherein the electronic valve delivers pulses of the first gas in intervals of less than about 1 second to about 2 seconds. 
     
     
         12 . The apparatus of  claim 10 , further comprising:
 a seal disposed between the first gas distribution zone and the second gas distribution zone.   
     
     
         13 . The apparatus of  claim 10 , wherein the second gas distribution zone is in fluid communication with at least two gas sources. 
     
     
         14 . The apparatus of  claim 13 , wherein the at least two gas sources are coupled to a mixing chamber disposed between the flow controller and the second gas distribution zone. 
     
     
         15 . The apparatus of  claim 13 , wherein one of the at least two gas sources comprises a titanium containing precursor. 
     
     
         16 . The apparatus of  claim 13 , wherein the electronic valve is coupled to a tungsten containing gas source and a reducing gas source. 
     
     
         17 . An apparatus for processing a substrate, comprising:
 a process chamber; and   a dual-mode gas distribution plate disposed within the process chamber, the dual-mode gas distribution plate comprising:
 a first gas distribution zone having an opening in a center of the gas distribution plate; and 
 a second gas distribution zone having a plurality of openings radially dispersed around the opening in the center of the gas distribution plate, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein: 
 the first gas distribution zone is coupled to an electronic valve to deliver sequential pulses of a tungsten containing gas and a reducing gas to the first gas distribution zone to perform a cyclical deposition process; and 
 the second gas distribution zone is in communication with a flow controller to deliver a second gas comprising a titanium containing precursor gas to perform a chemical vapor deposition process. 
   
     
     
         18 . The apparatus of  claim 17 , wherein the electronic valve delivers pulses of the tungsten containing gas and the reducing gas in intervals of less than about 1 second to about 2 seconds. 
     
     
         19 . The apparatus of  claim 17 , further comprising:
 a seal disposed between the first gas distribution zone and the second gas distribution zone.   
     
     
         20 . The apparatus of  claim 17 , further comprising:
 a mixing chamber disposed between the flow controller and the second gas distribution zone.