Side light emitting type semiconductor laser diode having dielectric layer formed on active layer

Abstract

Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

1 - 4 . (canceled) 
     
     
         5 . A side light emitting type semiconductor laser diode comprising
 a substrate;   an n-clad layer disposed on the substrate;   an n-light guide layer disposed on the n-clad layer;   an active layer disposed on the n-light guide layer;   a p-light guide layer disposed on the active layer;   a dielectric layer with a ridge structure disposed on the p-light guide layer; and   a current restriction region disposed on both sides of the p-light guide layer.   
     
     
         6 . The side light emitting type semiconductor laser diode of  claim 5 , further comprising a current restriction region disposed on the upper surface of the n-light guide layer to restrict a current applied to the active layer. 
     
     
         7 . The side light emitting type semiconductor laser diode of  claim 5 , further comprising a p-contact layer interposed between the p-light guide layer and the dielectric layer and a current diffusion layer interposed between the p-light guide layer and the p-contact layer. 
     
     
         8 - 13 . (canceled) 
     
     
         14 . The side light emitting type semiconductor laser diode of  claim 6 , wherein the current restriction layer is formed of one of undoped AlGaN and p-AlGaN. 
     
     
         15 . The side light emitting type semiconductor laser diode of  claim 7 , wherein the current diffusion layer is formed of AlGaN.