n-Type thiophene semiconductors

Abstract

The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm 2 /Vs—some of the highest reported to date for n-type organic semiconductors.

1 . An n-type polythiophene composition having the structural formula 
       
         
           
           
               
               
           
         
       
       wherein R 1 , R 2  and R 3  are selected from the substituent group consisting of fluoroalkyl moieties, C n H 2n+1  and where n is about 1-12, H, F and (CH 2 ) a X and where a is about 1-12 and X is selected from the group consisting of amino, hydroxy and carboxylic acid functionalities; and x, y and z are integers selected from the group of integers consisting of 0 and integers greater than 0. 
     
     
         2 . The n-type polythiophene composition of  claim 1  wherein said fluoroalkyl moiety is selected from the group consisting of linear fluoroalkyl substituents, branched fluoroalkyl substituents and cyclic fluoroalkyl substituents. 
     
     
         3 . The n-type polythiophene composition of  claim 2  wherein said fluoroalkyl moiety has a compositional formula C n F 2n+1 , where n is about 1-8. 
     
     
         4 . The n-type polythiophene composition of  claim 1  wherein x is about 0-4; y is about 0-8, and z is about 0-12. 
     
     
         5 . The n-type polythiophene composition of  claim 4  wherein said fluoroalkyl moiety has the compositional formula C n F 2n+1 , where n is about 1-8.