Light-emitting diode and manufacturing method thereof

Abstract

A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is fromed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so tat the LED chip is electrically connected to the metal circuit.

1 . A light emitting diode (LED), comprising:
 a transparent substrate;   a first transparent conductive layer disposed on a region of the transparent substrate;   a second transparent conductive layer disposed on the other region of the transparent substrate and electrically isolated from the first transparent conductive layer;   a plurality of metal circuits respectively disposed on the first transparent conductive layer and the second transparent conductive layer, and cover portions of the first transparent conductive layer and the second transparent conductive layer; and   a LED chip disposed on the metal circuits and electrically connected to the metal circuits, wherein the LED chip is suitable for emitting a light and a portion of the light emits toward to the transparent substrate.   
     
     
         2 . The LED as claimed in  claim 1 , wherein the transparent substrate comprised a glass substrate, a plastic substrate or a flexible substrate. 
     
     
         3 . The LED as claimed in  claim 1 , wherein a material of the first transparent conductive layer and the second transparent conductive layer comprises indium tin oxide. 
     
     
         4 . The LED as claimed in  claim 1 , wherein a material of the metal circuits comprises gold, aluminum, copper, or an alloy thereof. 
     
     
         5 . A light emitting diode (LED) device, comprising:
 a transparent substrate;   a transparent conductive pattern layer disposed on the transparent substrate;   a first metal circuit and a second metal circuit on the transparent conductive pattern layer intersect with each other, wherein the second metal circuit and the first metal circuit electrically isolated from each other;   a insulating layer disposed between the first metal circuit and the second metal circuit to electrically isolate the first metal circuit and the second metal circuit; and   a LED chip disposed on the first metal circuit and the second metal circuit and electrically connected to the first metal circuit and the second metal circuit, wherein the LED chip is suitable for emitting a light and a portion of the light emits toward to the transparent substrate.   
     
     
         6 . The LED device as claimed in  claim 5 , wherein the transparent substrate comprised a glass substrate, a plastic substrate or a flexible substrate. 
     
     
         7 . The LED device as claimed in  claim 5 , wherein a material of the first transparent conductive layer and the second transparent conductive layer comprises indium tin oxide. 
     
     
         8 . The LED device as claimed in  claim 5 , wherein a material of the the first metal circuit and the second metal circuit comprises gold, aluminum, copper, or an alloy thereof. 
     
     
         9 . The LED device as claimed in  claim 5 , wherein a material of the insulating layer comprises silicon oxide or nitride dioxide. 
     
     
         10 . A manufacturing method of a light emitting diode (LED), comprising:
 providing a transparent substrate;   forming a first transparent conductive layer on a region of the transparent substrate;   forming a second transparent conductive layer on the other region of the transparent substrate and electrically isolated with the first transparent conductive layer;   forming a plurality of metal circuits on the first transparent conductive layer and the second transparent conductive layer respectively, and covering the portions of the first transparent conductive layer and the second transparent conductive layer; and   disposing a LED chip on the metal circuits and electrically connected to the metal circuits.   
     
     
         11 . The manufacturing method of the LED as claimed in  claim 10 , wherein a material of the transparent conductive layer is indium tin oxide. 
     
     
         12 . The manufacturing method of the LED as claimed in  claim 10 , wherein a method of forming the first transparent conductive layer and the second transparent conductive layer includes a photolithography process. 
     
     
         13 . The manufacturing method of the LED as claimed in  claim 10 , wherein a method of forming the first transparent conductive layer and the second transparent conductive layer includes an etching process. 
     
     
         14 . The manufacturing method of the LED as claimed in  claim 10 , wherein a method of disposing the LED chip comprises disposing the LED chip on the metal circuits through a silver glue or an eutectic bonding. 
     
     
         15 . A manufacturing method of a light emitting diode (LED), comprising:
 providing a transparent substrate;   forming a transparent conductive pattern layer on the transparent substrate;   forming a first metal circuit and a second circuit on the transparent conductive pattern layer across each other, wherein the second metal circuit and the first metal circuit electrically isolated from each other;   disposing a insulating layer between the first metal circuit and the second metal circuit to electrically isolate the first metal circuit and the second metal circuit; and   disposing a LED chip on the first metal circuit and the second metal circuit and electrically connected to the first metal circuit and the second metal circuit.   
     
     
         16 . The manufacturing method of the LED as claimed in  claim 15 , wherein a material of the transparent conductive pattern layer is indium tin oxide. 
     
     
         17 . The manufacturing method of the LED as claimed in  claim 15 , wherein a method of forming the transparent conductive pattern layer comprises a photolithography process and an etching process. 
     
     
         18 . The manufacturing method of the LED as claimed in  claim 15 , wherein a material of the first metal circuit and the second metal circuit comprises gold, aluminum, copper, or an alloy thereof. 
     
     
         19 . The LED device as claimed in  claim 15 , wherein a material of insulating layer comprises silicon oxide or nitride dioxide. 
     
     
         20 . The manufacturing method of the LED as claimed in  claim 15 , wherein a method of disposing the LED chip comprises disposing the LED chip on the first metal circuit and the second metal circuit through a silver glue or an eutectic bonding.