Semiconductor substrates and manufacturing methods of the same

Abstract

Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

1 . A semiconductor substrate, comprising:
 an insulation region on a substrate region; and   a floating body region separated from the substrate region by the insulation region and disposed on the insulation region,   the substrate region and the floating body region being formed of materials having identical characteristics.   
     
     
         2 . The semiconductor substrate of  claim 1 , wherein the substrate region is formed from a bulk semiconductor substrate. 
     
     
         3 . The semiconductor substrate of  claim 1 , wherein the insulation region is formed of a silicon oxide. 
     
     
         4 . The semiconductor substrate of  claim 1 , wherein the floating body region includes a plurality of floating body patterns disposed parallel to the floating body region. 
     
     
         5 . The semiconductor substrate of  claim 4 , further comprising a plurality of insulating layers between the plurality of floating body patterns, the plurality of insulating layers separating the plurality of floating body patterns from one another. 
     
     
         6 . The semiconductor substrate of  claim 5 , wherein the plurality of insulating layers are connected to the insulation region. 
     
     
         7 . The semiconductor substrate of  claim 1 , wherein a thickness of the floating body region varies. 
     
     
         8 . The semiconductor device of  claim 1 , further comprising a device structure on the floating body region. 
     
     
         9 . The semiconductor device of  claim 8 , wherein the device structure is one selected from the group consisting of a transistor, a memory device, a sensor and a switching unit.