System and Method for Depositing a Material on a Substrate

Abstract

A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.

1 . A distributor assembly comprising:
 a first chamber including an interior into which a solid material and carrier gas are introduced;   a heating element positioned within the interior of the first chamber and providing a temperature high enough that at least a portion of the solid material vaporizes into a vapor;   a filter positioned within the interior of the first chamber to allow passage of the vapor and carrier gas but not solid material;   a second chamber proximate to the first chamber and providing a material flow sufficiently indirect to mix the vapor and the carrier gas into a substantially uniform vapor/carrier gas composition; and   an outlet proximate to the second chamber and positioned in a manner that directs the uniform vapor/carrier gas composition toward a surface of a proximate substrate.   
     
     
         2 . The distributor assembly of  claim 1 , wherein the filter is positioned inside the first chamber. 
     
     
         3 . The distributor assembly of  claim 2 , wherein the filter comprises a cantilevered tubular filter positioned inside the first chamber. 
     
     
         4 . The distributor assembly of  claim 1 , wherein the first chamber comprises the heating element and is heated by resistive heating. 
     
     
         5 . The distributor assembly of  claim 1 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 500 degrees C. 
     
     
         6 . The distributor assembly of  claim 1 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 700 degrees C. 
     
     
         7 . The distributor assembly of  claim 1 , wherein the first chamber comprises a plurality of distribution holes. 
     
     
         8 . The distributor assembly of  claim 1 , wherein the first chamber and the second chamber are tubular, and the first chamber is positioned within the second chamber so that the second tubular chamber sheaths the first tubular chamber. 
     
     
         9 . The distributor assembly of  claim 3 , wherein the cantilevered tubular filter comprises a heating element and is heated by resistive heating. 
     
     
         10 . A system for depositing a film on a substrate comprising:
 a material source connected to a distributor assembly such that a solid material and carrier gas supplied by the material source are introduced into the distributor assembly, wherein the distributor assembly includes:
 a first chamber including an interior, such that the solid material and carrier gas introduced into the distributor assembly are directed into the interior of the first chamber; 
 a heating element positioned within the first chamber and providing a temperature high enough that at least a portion of the solid material vaporizes into a vapor; 
 a filter positioned within the interior of the first chamber and formed to allow passage of the vapor and carrier gas but not solid material; 
 a second chamber proximate to the first chamber and providing a material flow sufficiently indirect to mix the vapor and the carrier gas into a substantially uniform vapor/carrier gas composition; and 
 an outlet proximate to the second chamber and positioned in a manner that the uniform vapor/carrier gas composition toward a surface of a proximate substrate; and 
   a conveyor for transporting the substrate sufficiently proximate to the distributor assembly such that the vapor may be deposited on the substrate as a film.   
     
     
         11 . The system of  claim 10 , wherein the filter is positioned inside the first chamber. 
     
     
         12 . The system of  claim 11 , wherein the filter comprises a cantilevered tubular filter positioned inside the first chamber. 
     
     
         13 . The system of  claim 10 , wherein the first chamber comprises the heating element and is heated by resistive heating. 
     
     
         14 . The system of  claim 10 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 500 degrees C. 
     
     
         15 . The system of  claim 10 , wherein the heating element is capable of maintaining the first chamber at a temperature of at least 700 degrees C. 
     
     
         16 . The system of  claim 10 , wherein the first chamber comprises a plurality of distribution holes. 
     
     
         17 . The system of  claim 10 , wherein the first chamber and the second chamber are tubular, and the first chamber is positioned within the second chamber so that the second tubular chamber sheaths the first tubular chamber. 
     
     
         18 . The system of  claim 12 , wherein the cantilevered tubular filter comprises a heating element and is heated by resistive heating.