Power semiconductor device for igniter

Abstract

A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.

1 . A power semiconductor device for an igniter comprising:
 a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil;   an integrated circuit driving and controlling the semiconductor switching device; and   a temperature sensing element sensing temperature of the semiconductor switching device,   wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.   
     
     
         2 . The power semiconductor device for an igniter according to  claim 1 , wherein the temperature sensing element and the semiconductor switching device are provided on a common substrate. 
     
     
         3 . The power semiconductor device for an igniter according to  claim 1 , wherein the temperature sensing element and the integrated circuit are provided on a common substrate. 
     
     
         4 . The power semiconductor device for an igniter according to  claim 1 , wherein the temperature sensing element includes a Schottky barrier diode. 
     
     
         5 . The power semiconductor device for an igniter according to  claim 1 , wherein temperature characteristic of the temperature sensing element can be externally adjusted. 
     
     
         6 . The power semiconductor device for an igniter according to  claim 1 , further comprising an overheat protection operation condition output circuit outputting a signal indicating that the overheat protection circuit is limiting the current through the semiconductor switching device.