Etching apparatus

Abstract

An etching apparatus that includes a number of chambers having an opening that is opened to move in or discharge a substrate, an injection member that is installed inside each chamber to inject a chemical liquid, and an interception member that is adjacently installed at the opening of each chamber and sucks gas introduced into the opening.

1 . An etching apparatus, comprising:
 a plurality of chambers having an opening that is opened to move in or discharge a substrate;   an injection member installed inside each chamber of the plurality of chambers to inject a chemical liquid; and   an interception member that is adjacently installed at the opening of each chamber plurality of chambers and sucks gas introduced into the opening of each chamber of the plurality of chambers.   
     
     
         2 . The etching apparatus of  claim 1 , further comprising
 an acid outlet that is installed in each chamber of the plurality of chambers to suck fumes generated in each chamber of the plurality of chambers.   
     
     
         3 . The etching apparatus of  claim 1 , wherein
 the interception member is formed in a pipe shape in which a plurality of suction holes are formed.   
     
     
         4 . The etching apparatus of  claim 3 , wherein
 the opening is formed in a quadrangular shape having a width direction and a height direction, and   the interception member is disposed along the width direction of the opening and the suction hole is disposed to be spaced along the width direction of the opening.   
     
     
         5 . The etching apparatus of  claim 1 , wherein
 the interception member is installed on the opening in the chamber based on the direction of the force of gravity.   
     
     
         6 . The etching apparatus of  claim 1 , wherein
 the opening is an outlet through which the substrate is discharged and the interception member is adjacently disposed to the outlet.   
     
     
         7 . The etching apparatus of  claim 1 , wherein
 the opening includes an inlet through which the substrate is moved in and the interception member is adjacently disposed to the inlet.   
     
     
         8 . The etching apparatus of  claim 1 , wherein
 the opening includes the inlet through which the substrate is moved in and the outlet through which the substrate is discharged, and the interception member is installed at a position adjacent to the inlet and the outlet, respectively.   
     
     
         9 . The etching apparatus of  claim 1 , wherein
 the interception member is installed with a cover that covers the interception member.   
     
     
         10 . The etching apparatus of  claim 9 , wherein
 the upper surface of the cover is formed to be tilted with respect to the ground.   
     
     
         11 . The etching apparatus of  claim 1 , wherein
 The plurality of chambers include an etching chamber in which the substrate of the etching process is performed and a buffer chamber in which the substrate is temporarily held,   the etching chamber and the buffer chamber each include an inlet through which the substrate is discharged and an outlet through which the substrate is moved in, and   the interception member is installed at a position adjacent to the inlet of the etching chamber and the interception member is installed at a position adjacent to an outlet of the buffer chamber.   
     
     
         12 . The etching apparatus of  claim 1 , wherein
 The plurality of chambers include an etching chamber in which the substrate of the etching process is performed and a buffer chamber in which the substrate is temporarily held,   the etching chamber and the buffer chamber each include an inlet through which the substrate is moved in and an outlet through which the substrate is discharged, and   the interception member is installed at a position adjacent to the inlet and outlet of the etching chamber, respectively, and the interception member is installed at a position adjacent to an outlet of the buffer chamber.   
     
     
         13 . An etching apparatus, comprising:
 a buffer chamber in which a substrate is temporarily held having an opening that is opened to move in or discharge the substrate;   a plurality of etching chambers each having another opening that is opened to move in or discharge a substrate;   a plurality of injection members installed inside each chamber of the plurality of etching chambers to inject a chemical liquid; and   a plurality of interception members positioned immediately adjacent to the another opening of each chamber plurality of etching chambers and the opening of the buffer chamber that extracts gas introduced into the another opening of each chamber of the plurality of etching chambers and the opening of the buffer chamber.   
     
     
         14 . The etching apparatus of  claim 13 , wherein
 the buffer chamber and the plurality of etching chambers each include an inlet through which the substrate is discharged and an outlet through which the substrate is moved in, and   the interception member is installed at a position adjacent to the inlet of the etching chamber and the interception member is installed at a position adjacent to an outlet of the buffer chamber.   
     
     
         15 . The etching apparatus of  claim 13 , wherein
 the buffer chamber and the plurality of etching chambers each include an inlet through which the substrate is moved in and an outlet through which the substrate is discharged, and   each of the plurality of interception members is installed at a position adjacent to an inlet and outlet of each the plurality of etching chambers, respectively, and the interception member is installed at a position adjacent to an outlet of the buffer chamber.   
     
     
         16 . The etching apparatus of  claim 13 , wherein
 each of the plurality of interception members is coupled to a vacuum pump that provides suction pressure.   
     
     
         17 . The etching apparatus of  claim 13 , wherein
 the opening of the buffer chamber and the another opening of each of the plurality of etching chambers is shaped as a quadrangle having a width direction and a height direction,   wherein the width direction is a direction intersecting the direction of the force of gravity and the height direction is a direction parallel with the direction of the force of gravity, and   wherein each of the plurality of interception members is positioned immediately adjacent to the width direction of the opening of the buffer chamber and the another opening of each of the plurality of etching chambers.   
     
     
         18 . The etching apparatus of  claim 17 , wherein
 each of the plurality of interception members is positioned above the opening of the buffer chamber and the another opening of each of the plurality of etching chambers, wherein   above is a position furthest from the force of gravity and below is a position nearest the force of gravity.