US2011141650A1PendingUtilityA1

Electrostatic chuck device and method for determining attracted state of wafer

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Assignee: FUJISAWA HIROSHIPriority: Sep 4, 2008Filed: Aug 26, 2009Published: Jun 16, 2011
Est. expirySep 4, 2028(~2.1 yrs left)· nominal 20-yr term from priority
H10P 72/0604H10P 72/72H10P 72/14H10P 72/0602H10P 72/70H10P 72/76H02N 13/00B23Q 3/15
47
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Claims

Abstract

Provided is an electrostatic chuck device including attraction determining means, which enables a quick and accurate recognition of an attracted state of a substrate, and also provided is a method of determining an attracted state of a substrate, which enables a quick and accurate recognition of the attracted state of the substrate in the electrostatic chuck device. The electrostatic chuck device includes: an electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on an upper surface side of a metal base; and attraction determining means for determining the attracted state of the substrate. Further, the method of determining an attracted state of a substrate is used for the electrostatic chuck device including the electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on the upper surface side of the metal base, the method including obtaining, by a heat flux sensor, a flow of heat transferred from the substrate via the electrostatic chuck, to thereby determine the attracted state of the substrate.

Claims

exact text as granted — not AI-modified
1 . An electrostatic chuck device, comprising:
 an electrostatic chuck for attracting a substrate, the electrostatic chuck being provided on an upper surface side of a metal base; and   attraction determining means for determining an attracted state of the substrate.   
     
     
         2 . An electrostatic chuck device according to  claim 1 , wherein the attraction determining means comprises a heat flux sensor, and determine the attracted state of the substrate based on a flow of heat transferred from the substrate via the electrostatic chuck. 
     
     
         3 . An electrostatic chuck device according to  claim 2 , wherein the heat flux sensor is disposed on a metal base side. 
     
     
         4 . An electrostatic chuck device according to  claim 3 , wherein the heat flux sensor is disposed so as to be flush with an upper surface of the metal base. 
     
     
         5 . An electrostatic chuck device according to any one of  claims 2  to  4 , wherein a heat flux is obtained at a plurality of locations with respect to a planar area of the substrate. 
     
     
         6 . A method of determining an attracted state of a substrate, which is used for an electrostatic chuck device comprising an electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on an upper surface side of a metal base,
 the method comprising obtaining, by a heat flux sensor, a flow of heat transferred from the substrate via the electrostatic chuck, to thereby determine the attracted state of the substrate.   
     
     
         7 . A method of determining an attracted state of a substrate according to  claim 6 , wherein the heat flux sensor is disposed on a metal base side. 
     
     
         8 . A method of determining an attracted state of a substrate according to  claim 7 , wherein the heat flux sensor is disposed so as to be flush with an upper surface of the metal base. 
     
     
         9 . A method of determining an attracted state of a substrate according to any one of  claims 6  to  8 , wherein a heat flux is obtained at a plurality of locations with respect to a planar area of the substrate.

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