Interposer and semiconductor device

Abstract

An interposer and a semiconductor device including the interposer are provided, which can prevent thermal warpage of an insulative substrate thereof. The interposer is provided with a semiconductor chip in a semiconductor device andmay be disposed between the semiconductor chip and a mount board. The interposer includes: a substrate of an insulative resin; an island on one surface of the substrate to be bonded to a rear surface of the chip; a thermal pad on the other surface opposite the one surface opposed to the island with the intervention of the substrate; and a thermal via extending through the substrate from the one surface to the other surface to thermally connect the island to the thermal pad.

1 . An interposer to be provided together with a semiconductor chip in a semiconductor device and, when the semiconductor device is mounted on a mount board, disposed between the semiconductor chip and the mount board, the interposer comprising:
 an insulative substrate of an insulative resin;   an island provided on one surface of the insulative substrate to be bonded to a rear surface of the semiconductor chip via a bonding agent;   a thermal pad provided on the other surface of the insulative substrate opposite from the one surface in generally opposed relation to the island with the intervention of the insulative substrate, the thermal pad having substantially the same size and plan shape as those of the island; and   a thermal via extending through the insulative substrate from the one surface to the other surface to connect the island to the thermal pad in a thermally conductive manner.   
     
     
         2 . The interposer according to  claim 1 , further comprising:
 internal terminals provided on the one surface of the insulative substrate for electrical connection to the semiconductor chip;   external terminals provided on the other surface of the insulative substrate for electrical connection to lands on the mount board; and   inter-terminal connection vias extending through the insulative substrate from the one surface to the other surface to respectively electrically connect the internal terminals to the external terminals.   
     
     
         3 . The interposer according to  claim 2 , further comprising a thermal bump provided on the thermal pad and adapted to abut against the mount board with the semiconductor device mounted on the mount board. 
     
     
         4 . The interposer according to  claim 3 ,
 wherein the island, the thermal pad, the thermal via and the thermal bump are electrically conductive,   wherein the bonding agent is composed of a metal material,   wherein the thermal bump is adapted to abut against a ground terminal on the mount board with the semiconductor device mounted on the mount board.   wherein the thermal pad has substantially the same thickness as that of the island.   
     
     
         5 . The interposer according to  claim 4 , wherein the bonding agent is a high melting point solder. 
     
     
         6 . A semiconductor device comprising:
 a semiconductor chip;   an insulative substrate of an insulative resin;   an island provided on one surface of the insulative substrate and bonded to a rear surface of the semiconductor chip via a bonding agent;   a thermal pad provided on the other surface of the insulative substrate opposite from the one surface in generally opposed relation to the island with the intervention of the insulative substrate, the thermal pad having substantially the same size and plan shape as those of the island; and   a thermal via extending through the insulative substrate from the one surface to the other surface to connect the island to the thermal pad in a thermally conductive manner.   
     
     
         7 . The semiconductor device according to  claim 6 , further comprising:
 internal terminals provided on the one surface of the insulative substrate and electrically connected to the semiconductor chip;   external terminals provided on the other surface of the insulative substrate for electrical connection to lands on a mount board on which the semiconductor device is mounted; and   inter-terminal connection vias extending through the insulative substrate from the one surface to the other surface to respectively electrically connect the internal terminals to the external terminals.   
     
     
         8 . The semiconductor device according to  claim 7 , further comprising a thermal bump provided on the thermal pad and adapted to abut against the mount board with the semiconductor device mounted on the mount board. 
     
     
         9 . The semiconductor device according to  claim 8 ,
 wherein the island, the thermal pad, the thermal via and the thermal bump are electrically conductive,   wherein the bonding agent is composed of a metal material,   wherein the thermal bump is adapted to abut against a ground terminal on the mount board with the semiconductor device mounted on the mount board,   wherein the thermal pad has substantially the same thickness as that of the island.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein the bonding agent is a high melting point solder.