Method of forming light-emitting diode

Abstract

A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.

1 . A method of forming light-emitting diode, comprising:
 providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;   forming one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer;   providing a supporting layer having one or more supporting layer openings;   connecting at least one epitaxial layer opening with at least one supporting layer opening; and   decreasing a volume of the sacrificial layer to separate the growth substrate from the epitaxial layer.   
     
     
         2 . The method of  claim 1 , wherein the step of connecting the at least one epitaxial layer opening with the at least one supporting layer opening comprises:
 penetrating the supporting layer.   
     
     
         3 . The method of  claim 1 , wherein the step of decreasing the volume of the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the epitaxial layer opening and the supporting layer opening. 
     
     
         4 . The method of  claim 3 , wherein the growth substrate comprises a material selected from the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting layer comprises a material selected from the group consisting of photo resister, metal, and plating metal; and the etchant comprises citric acid. 
     
     
         5 . A method of forming light-emitting diode, includes:
 providing a growth substrate having one or more substrate openings passing through the growth substrate;   forming a sacrificial layer on the growth substrate;   forming a epitaxial layer on the sacrificial layer, the epitaxial layer having one or more epitaxial layer openings passing through the epitaxial layer;   providing a supporting substrate to connect with the epitaxial layer; and   selectively etching the sacrificial layer to separate the growth substrate from epitaxial layer.   
     
     
         6 . The method of  claim 5 , wherein the growth substrate surrounds the substrate opening. 
     
     
         7 . The method of  claim 5 , wherein the step of forming the sacrificial layer comprises: forming one or more sacrificial layer openings, passing through the sacrificial layer, to connect the one or more substrate openings. 
     
     
         8 . The method of  claim 7 , wherein the sacrificial layer surrounds the sacrificial layer opening. 
     
     
         9 . The method of  claim 7 , wherein at least one epitaxial layer opening is connected with at least one sacrificial layer opening. 
     
     
         10 . The method of  claim 7 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the one or more substrate openings and the one ore more sacrificial layer openings. 
     
     
         11 . The method of  claim 10 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of glass, metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid. 
     
     
         12 . A method of forming light-emitting diode, includes:
 providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;   providing a supporting substrate having an upper surface and a lower surface, the lower surface having one or more recesses;   connecting the lower surface with the epitaxial layer;   removing a portion of the supporting substrate from the upper surface to expose at least one recess;   etching the epitaxial layer by using the supporting substrate as a mask to form one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer; and   selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.   
     
     
         13 . The method of  claim 12 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the recess and the sacrificial layer opening. 
     
     
         14 . The method of  claim 13 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of Si. A 2 lO 3 , metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid. 
     
     
         15 . A method of forming light-emitting diode, includes:
 providing a growth substrate on which a sacrificial layer and an epitaxial layer are sequentially formed;   providing a supporting substrate;   forming one or more supporting substrate openings through the supporting substrate;   connecting the supporting substrate with the epitaxial layer;   etching the epitaxial layer by using the supporting substrate as a mask to form one or more epitaxial layer openings passing through the epitaxial layer and exposing the sacrificial layer; and   selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer.   
     
     
         16 . The method of  claim 15 , wherein the supporting substrate surrounds the supporting substrate opening. 
     
     
         17 . The method of  claim 15 , wherein the step of selectively etching the sacrificial layer comprises: providing an etchant to contact the sacrificial layer through the supporting substrate opening and the epitaxial layer opening. 
     
     
         18 . The method of  claim 17 , wherein the growth substrate comprises a material selected fro the group consisting of nitrogen, aluminum, gallium, arsenic, zinc, silicon, and oxygen; the sacrificial layer comprises a material selected from the group consisting of aluminum and arsenic; the supporting substrate comprises a material selected from the group consisting of Si. A 2 lO 3 , metal, semiconductor, plastics, and ceramics; and the etchant comprises citric acid. 
     
     
         19 . The method of  claim 15 , wherein the step of providing the supporting substrate comprises: connecting the supporting substrate with a temporary substrate; and removing the temporary substrate after connecting the supporting substrate with the epitaxial layer and before etching the epitaxial layer. 
     
     
         20 . The method of  claim 15 , wherein the temporary substrate comprises a material selected from the group consisting of glass, metal, semiconductor, plastics, and ceramics.